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RN2322A

Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
零件包装代码
SC-70
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
12 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
65
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
最大功率耗散 (Abs)
0.1 W
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
文档预览
RN2321A∼RN2327A
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2321A,RN2322A,RN2323A,RN2324A
RN2325A,RN2326A,RN2327A
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
High current driving is possible.
Since bias resisters are built in the transistor, the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
Complementary to RN1321A~RN1327A
Low V
CE(sat)
enable to be low power dissipation on high current driving.
Equivalent Circuit And Bias Resistance Values
Type No.
RN2321A
RN2322A
RN2323A
RN2324A
RN2325A
RN2326A
RN2327A
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
―
SC-70
2-2E1A
Weight: 0.006 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2321A~2327A
RN2321A~2324A
Emitter-base voltage
RN2325A, 2326A
RN2327A
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2321A~2327A
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−15
−12
−10
−5
−6
−500
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
RN2321A∼RN2327A
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off
current
RN2321A~2327A
RN2321A
RN2322A
RN2323A
Emitter cut-off current
RN2324A
RN2325A
RN2326A
RN2327A
RN2321A
RN2322A
RN2323A
DC current gain
RN2324A
RN2325A
RN2326A
RN2327A
Collector-emitter
saturation voltage
RN2321A
RN2322A~2327A
RN2321A
RN2322A
RN2323A
Input voltage (ON)
RN2324A
RN2325A
RN2326A
RN2327A
RN2321A~2324A
Input voltage (OFF)
RN2325A, 2326A
RN2327A
Transition frequency
Collector Output
capacitance
RN2321A~2327A
RN2321A~2327A
RN2321A
RN2322A
RN2323A
Input resistor
RN2324A
RN2325A
RN2326A
RN2327A
RN2321A~2324A
Resistor ratio
RN2325A
RN2326A
RN2327A
R1/R2
―
―
R1
―
―
f
T
C
ob
―
―
V
CE
=−5V, I
C
=−20mA
V
CB
= 10V, I
E
= 0,
f = 1MH
z
V
I (OFF)
―
V
CE
=
−5V,
I
C
=
−0.1mA
V
I (ON)
―
V
CE
=−0.2V, I
C
=−50mA
V
CE (sat)
―
I
C
=
−50mA,
I
B
=−2mA
I
C
=
−50mA,
I
B
=−1mA
h
FE
―
V
CE
=
−1V,
I
C
=−50mA
I
EBO
―
V
EB
=
−5V,
I
C
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=−10V, I
C
= 0
Symbol
I
CBO
I
CEO
Test
Circuit
―
Test Condition
V
CB
=
−15V,
I
E
= 0
V
CE
=
−12V,
I
B
= 0
Min
―
―
−3.85
−1.75
−0.82
−0.38
−0.365
−0.35
−0.378
35
65
100
140
140
140
140
―
−1.0
−1.1
−1.3
−1.5
−0.5
−0.6
−0.7
−0.8
−0.4
−0.5
―
―
0.7
1.54
3.29
7
0.329
0.7
1.54
0.85
0.040
0.085
0.187
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
200
5
1
2.2
4.7
10
0.47
1
2.2
1.0
0.047
0.1
0.220
Typ.
―
―
―
―
―
―
―
―
Max
−100
−500
−7.14
−3.25
−1.52
−0.71
−0.682
−0.65
−0.703
―
―
―
―
―
―
―
−0.25
−2.4
−2.7
−3.5
−5.2
−1.2
−1.4
−1.9
−1.4
−0.8
−1.0
―
―
1.3
2.86
6.11
13
0.611
1.3
2.86
1.15
0.054
0.115
0.253
kΩ
MH
z
pF
V
V
V
mA
Unit
nA
2
2007-11-01
RN2321A∼RN2327A
RN2321A
-1000
COLLECTOR CURRENT IC (mA)
Ta=100°C
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2321A IC - VI(OFF)
-100
-1000
Ta=100°C
25
-
25
25
-10
-
25
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-0.1
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-100
COMMON
EMITTER
VCE=- 5V
-0
-0.5
-1
-1.5
INPUT VOLTAGE VI(OFF) (V)
-2
-10
RN2321A
1000
DC CURRENT GAIN hFE
hFE - IC
SATURATION VOLTAGE VCE(sat) (V)
-1
RN2321A
VCE(sat) - IC
COMMON EMITTER
IC/IB=25
100
Ta=100°C
25
-
25
Ta=100°C
-0.1
25
-25
10
COMMON EMITTER
VCE=- 1V
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
-0.01
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
3
2007-11-01
RN2321A∼RN2327A
RN2322A
-1000
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2322A IC - VI(OFF)
-100
Ta=100°C
25
-1000
Ta=100°C
25
-
25
-10
-
25
-1
COMMON EMITTER
VCE=- 0.2V
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-100
COMMON
EMITTER
VCE=- 5V
-10
-0
-0.5
-1
-1.5
INPUT CURRENT VI(OFF) (V)
-2
-0.1
-0.1
RN2322A
1000
hFE - IC
-1
COLLCTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
RN2322A
VCE(sat) - IC
DC CURRENT GAIN hFE
COMMON EMITTER
VCE=- 1V
100
Ta=100°C
25
-
25
10
COMMON EMITTER
IC/IB=50
Ta=100°C
-0.1
25
-
25
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
-0.01
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
4
2007-11-01
RN2321A∼RN2327A
RN2323A
-1000
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2323A IC - VI(OFF)
COMMON
EMITTER
VCE=- 5V
-1000
Ta=100°C
25
-
25
-100
Ta=100°C
-10
25
-
25
-1
COMMON EMITTER
VCE=- 0.2V
-0.1
-0.1
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-100
-10
-0
-0.5
-1
-1.5
INPUT VOLTAGE VI(OFF) (V)
-2
RN2323A
1000
hFE - IC
-1
COLLCTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
RN2323A
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
100
-
25
10
COMMON EMITTER
VCE=- 1V
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
IC/IB=50
Ta=100°C
-0.1
25
-
25
25
-0.01
-10
-100
-1000
COLLECTOR CURRENT IC (mA)
5
2007-11-01
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参数对比
与RN2322A相近的元器件有：RN2321A、RN2323A、RN2324A、RN2326A、RN2327A、RN2325A。描述及对比如下：
型号 RN2322A RN2321A RN2323A RN2324A RN2326A RN2327A RN2325A
描述 Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 USM, 2-2E1A, SC-70, 3 PIN USM, 2-2E1A, SC-70, 3 PIN USM, 2-2E1A, SC-70, 3 PIN USM, 2-2E1A, SC-70, 3 PIN USM, 2-2E1A, SC-70, 3 PIN
针数 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 0.220 BUILT-IN BIAS RESISTOR RATIO IS 0.047
最大集电极电流 (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
集电极-发射极最大电压 12 V 12 V 12 V 12 V 12 V 12 V 12 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 65 35 100 140 140 140 140
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
厂商名称 Toshiba(东芝) - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) - -
零件包装代码 SC-70 SC-70 SC-70 SC-70 - - SC-70
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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