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RN2501TE85L

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

器件类别：分立半导体    晶体管   

厂商名称：Toshiba(东芝)

厂商官网：http://toshiba-semicon-storage.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
包装说明
SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code
unknown
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
6 pF
集电极-发射极最大电压
50 V
配置
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
30
JESD-30 代码
R-PDSO-G5
元件数量
2
端子数量
5
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
VCEsat-Max
0.3 V
文档预览
RN2501~RN2506
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2501,RN2502,RN2503
RN2504,RN2505,RN2506
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SMV (super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1501 to RN1506
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2501
RN2502
RN2503
RN2504
RN2505
RN2506
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
SMV
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 14 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2501 to 2506
RN2501 to 2506
RN2501 to 2504
RN2505, 2506
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
Tj
Tstg
Rating
−50
−50
−10
−5
−100
300
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2010-05-20
RN2501~RN2506
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN2501 to 2506
RN2501
RN2502
Emitter cut-off current
RN2503
RN2504
RN2505
RN2506
RN2501
RN2502
DC current gain
RN2503
RN2504
RN2505
RN2506
Collector-emitter
saturation voltage
RN2501 to 2506
RN2501
RN2502
Input voltage (ON)
RN2503
RN2504
RN2505
RN2506
Input voltage (OFF)
Transition frequency
Collector output
capacitance
RN2501 to 2504
RN2505, 2506
RN2501 to 2506
RN2501 to 2506
RN2501
RN2502
Input resistor
RN2503
RN2504
RN2505
RN2506
RN2501 to 2504
Resistor ratio
RN2505
RN2506
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
=
−5V
I
C
=
−0.1mA
V
CE
=
−10V
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
f = 1MHz
V
CE
=
−0.2V
I
C
=
−5mA
I
C
=
−5mA
I
B
=
−0.25mA
V
CE
=
−5V
I
C
=
−10mA
V
EB
=
−5V,
I
C
= 0
V
EB
=
−10V,
I
C
= 0
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
Min
―
―
−0.82
−0.38
−0.17
−0.082
−0.078
−0.074
30
50
70
80
80
80
―
−1.1
−1.2
−1.3
−1.5
−0.6
−0.7
−1.0
−0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
―
―
200
3
4.7
10
22
47
2.2
4.7
1.0
Max
−100
−500
−1.52
−0.71
−0.33
−0.15
−0.145
−0.138
―
―
―
―
―
―
−0.3
−2.0
−2.4
−3.0
−5.0
−1.1
−1.3
−1.5
−0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
―
kΩ
V
MHz
pF
V
V
―
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2010-05-20
RN2501~RN2506
(Q1, Q2 Common)
3
2010-05-20
RN2501~RN2506
(Q1, Q2 Common)
4
2010-05-20
RN2501~RN2506
(Q1, Q2 Common)
5
2010-05-20
查看更多>
参数对比
与RN2501TE85L相近的元器件有：RN2501-11、RN2501(TE85L2)、RN2501(TE85L)、RN2501(TE85R)、RN2501TE85R。描述及对比如下：
型号 RN2501TE85L RN2501-11 RN2501(TE85L2) RN2501(TE85L) RN2501(TE85R) RN2501TE85R
描述 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
包装说明 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code unknown unknown unknown unknown unknown unknown
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 代码 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
元件数量 2 2 2 2 2 2
端子数量 5 5 5 5 5 5
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 Toshiba(东芝) - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
最小直流电流增益 (hFE) 30 - 30 30 30 30
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
标称过渡频率 (fT) 200 MHz - 200 MHz 200 MHz 200 MHz 200 MHz
针数 - 5 5 5 5 -
ECCN代码 - EAR99 EAR99 EAR99 EAR99 -
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