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RS1DL

0.8 A, 200 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:KEXIN

厂商官网:http://www.kexin.com.cn/html/index.htm

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SMD Type
Fast Recovery Diodes
RS1AL ~ RS1ML
SOD-123
+0.1
0.55
-0.1
Diodes
Unit: mm
+0.1
2.7
-0.1
+0.05
1.1
-0.05
Features
For surface mounted application
Glass passivated junction chip
Fast switching for high efficiency
Plastic material used carries Underwriters
Laboratory Classification 94V-0
0.50
+0.1
3.7
-0.1
0.1max
0.35
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Forward Voltage @ 0.8A
(Note.1)
Averaged Forward Current.T
L
=90℃
Peak Forward Surge Current Ta=25℃
Maximum DC Reverse Current Ta=25℃
Ta=125℃
Maximum Reverse Current (Note.2)
Typical Junction Capacitance
(Note.3)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Lead
Junction Temperature
Storage Temperature
Symbol
V
RRM
V
RMS
V
DC
V
F
I
FAV
I
FSM
I
R
trr
Cj
R
θJA
R
θJL
Tj
Tstg
150
10
105
32
150
-55 to 150
RS
1AL
50
35
50
RS
1BL
100
70
100
RS
1DL
200
140
200
RS
1GL
400
280
400
1.3
0.8
30
5
50
250
500
A
μA
ns
pF
℃/W
RS
1JL
600
420
600
RS
1KL
800
560
800
RS
1ML
1000
700
1000
V
Unit
+0.05
0.1
-0.02
Note.1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note.2: Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A
Note.3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Marking
NO
Marking
RS1AL
RS1A
RS1BL
RS1B
RS1DL
RS1D
RS1GL
RS1G
RS1JL
RS1J
RS1KL
RS1K
RS1ML
RS1M
+0.1
1.6
-0.1
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1
SMD Type
Fast Recovery Diodes
RS1AL ~ RS1ML
Typical Characterisitics
FIG.1 FORWARD CURRENT DERATING CURVE
1
INSTANTANEOUS REVERSE CURRENT (uA)
0.9
AVERAGE FORWARD
A
CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVE LOAD
TA=150℃
100
Diodes
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
10
1
TA=100℃
0.1
0.01
TA=25℃
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
8.3mS Single Half Sine Wave
JEDEC Method
0.001
0
20
40
60
80
100
120
140
PEAK FORWARD SURGE
A
CURRENT (A)
40
30
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
10
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Pulse Width=300us
1% Duty Cycle
INSTANTANEOUS FORWARD CURRENT (A)
1
TA=125℃
FIG. 4 TYPICAL JUNCTION CAPACITANCE
100
TA=25℃
f=1.0MHz
Vsig=50mVp-p
TA=25℃
0.1
CAPACITANCE (pF)
10
0.01
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
1
1
10
REVERSE VOLTAGE (V)
100
2
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参数对比
与RS1DL相近的元器件有:RS1BL、RS1GL、RS1JL、RS1ML、RS1AL、RS1KL。描述及对比如下:
型号 RS1DL RS1BL RS1GL RS1JL RS1ML RS1AL RS1KL
描述 0.8 A, 200 V, SILICON, SIGNAL DIODE 0.8 A, 100 V, SILICON, SIGNAL DIODE 0.8 A, 400 V, SILICON, SIGNAL DIODE 0.8 A, 600 V, SILICON, SIGNAL DIODE TAIWAN SEMICONDUCTOR - RS1ML - DIODE; FAST SMF GP 0.8A 1000V 0.8 A, 50 V, SILICON, SIGNAL DIODE 0.8 A, 800 V, SILICON, SIGNAL DIODE
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