SMD Type
Fast Recovery Diodes
RS1AL ~ RS1ML
SOD-123
+0.1
0.55
-0.1
Diodes
Unit: mm
+0.1
2.7
-0.1
+0.05
1.1
-0.05
■
Features
●
For surface mounted application
●
Glass passivated junction chip
●
Fast switching for high efficiency
●
Plastic material used carries Underwriters
Laboratory Classification 94V-0
0.50
+0.1
3.7
-0.1
0.1max
0.35
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Forward Voltage @ 0.8A
(Note.1)
Averaged Forward Current.T
L
=90℃
Peak Forward Surge Current Ta=25℃
Maximum DC Reverse Current Ta=25℃
Ta=125℃
Maximum Reverse Current (Note.2)
Typical Junction Capacitance
(Note.3)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Lead
Junction Temperature
Storage Temperature
Symbol
V
RRM
V
RMS
V
DC
V
F
I
FAV
I
FSM
I
R
trr
Cj
R
θJA
R
θJL
Tj
Tstg
150
10
105
32
150
-55 to 150
RS
1AL
50
35
50
RS
1BL
100
70
100
RS
1DL
200
140
200
RS
1GL
400
280
400
1.3
0.8
30
5
50
250
500
A
μA
ns
pF
℃/W
RS
1JL
600
420
600
RS
1KL
800
560
800
RS
1ML
1000
700
1000
V
Unit
+0.05
0.1
-0.02
℃
Note.1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note.2: Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A
Note.3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
■
Marking
NO
Marking
RS1AL
RS1A
RS1BL
RS1B
RS1DL
RS1D
RS1GL
RS1G
RS1JL
RS1J
RS1KL
RS1K
RS1ML
RS1M
+0.1
1.6
-0.1
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1
SMD Type
Fast Recovery Diodes
RS1AL ~ RS1ML
■
Typical Characterisitics
FIG.1 FORWARD CURRENT DERATING CURVE
1
INSTANTANEOUS REVERSE CURRENT (uA)
0.9
AVERAGE FORWARD
A
CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVE LOAD
TA=150℃
100
Diodes
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
10
1
TA=100℃
0.1
0.01
TA=25℃
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
8.3mS Single Half Sine Wave
JEDEC Method
0.001
0
20
40
60
80
100
120
140
PEAK FORWARD SURGE
A
CURRENT (A)
40
30
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
10
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Pulse Width=300us
1% Duty Cycle
INSTANTANEOUS FORWARD CURRENT (A)
1
TA=125℃
FIG. 4 TYPICAL JUNCTION CAPACITANCE
100
TA=25℃
f=1.0MHz
Vsig=50mVp-p
TA=25℃
0.1
CAPACITANCE (pF)
10
0.01
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
1
1
10
REVERSE VOLTAGE (V)
100
2
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模拟电子
