S9014
NPN General Purpose Transistors
* “G” Lead(Pb)-Free
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation T
A
=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
Value
45
50
5.0
100
0.4
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 50 Vdc, IE=0)
Emitter Cutoff Current (VEB= 3.0V d c, I C=0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
45
50
5.0
-
-
Max
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
S9014
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
WEITRON
Max
Unit
On Characteristics
DC Current Gain
(IC= 1mAdc, VCE=5Vdc)
Collector-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 5 mAdc)
Base-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 5 mAdc)
Transition Frequency
(IC= 10 mAdc, VCE= 5 Vdc, f=30MHz)
HFE
VCE(sat)
60
1000
-
-
0.3
Vdc
VBE(sat)
-
1
Vdc
fT
150
-
MHz
CLASSIFICATION OF hFE
Rank
Range
A
60-150
B
100-300
C
200-600
D
400-1000
WEITRON
http://www.weitron.com.tw
S9014
FIG.1
FIG.2
FIG.3
FIG.4
WEITRON
http://www.weitron.com.tw
S9014
unit:mm
TO-92 Outline Dimensions
E
TO-92
H
C
J
K
G
Dim
A
B
C
D
E
G
H
J
K
L
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
-
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50
B
L
WEITRON
http://www.weitron.com.tw
D
A
