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SB1H100HE3-73

High-Voltage Schottky Rectifier

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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New Product
SB1H90, SB1H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• High barrier technology for improved high T
J
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
DO-204AL (DO-41)
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
1.0 A
90 V, 100 V
50 A
0.62 V
1.0 μA
175 °C
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz
Maximum operating junction temperature
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
dV/dt
I
RRM
T
J
T
STG
SB1H90
90
63
90
1.0
50
10 000
1.0
175
- 55 to + 175
SB1H100
100
70
100
UNIT
V
V
V
A
A
V/μs
A
°C
°C
Document Number: 88716
Revision: 04-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
SB1H90, SB1H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.0 A
Maximum instantaneous forward voltage
I
F
= 2.0 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R (2)
V
F (1)
SYMBOL
SB1H90
0.77
0.62
V
0.86
0.70
1.0
0.5
μA
mA
SB1H100
UNIT
Maximum reverse current at rated V
R
Notes
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance
Note
P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
SYMBOL
R
θJA
(1)
R
θJL
(1)
SB1H90
57
°C/W
15
SB1H100
UNIT
(1)
ORDERING INFORMATION
(Example)
PREFERRED P/N
SB1H100-E3/54
SB1H100-E3/73
SB1H100HE3/54
(1)
SB1H100HE3/73
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.34
0.34
0.34
0.34
PREFERRED PACKAGE CODE
54
73
54
73
BASE QUANTITY
5500
3000
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.2
100
Instantaneous Forward Current (A)
Average Forward Current (A)
1.0
T
J
= 175 °C
10
T
J
= 150 °C
0.8
0.6
1
T
J
= 125 °C
T
J
= 100 °C
0.4
0.1
T
J
= 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.2
0
0
25
50
75
100
125
150
175
200
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
www.vishay.com
2
Fig. 2 - Typical Instantaneous Forward Characteristics
Document Number: 88716
Revision: 04-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
New Product
SB1H90, SB1H100
Vishay General Semiconductor
10 000
100
1000
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 100 °C
1
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Current (μA)
100
10
1
0.1
T
J
= 25 °C
0.01
20
40
60
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 3 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
10 000
Junction Capacitance (pF)
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 88716
Revision: 04-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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参数对比
与SB1H100HE3-73相近的元器件有:SB1H100-E3-54、SB1H100-E3-73、SB1H90_09。描述及对比如下:
型号 SB1H100HE3-73 SB1H100-E3-54 SB1H100-E3-73 SB1H90_09
描述 High-Voltage Schottky Rectifier High-Voltage Schottky Rectifier High-Voltage Schottky Rectifier High-Voltage Schottky Rectifier
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