SEMiX 503GB126HDs
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMiX
®
3s
Trench IGBT Modules
SEMiX 503GB126HDs
Module
Preliminary Data
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GB
1
19-04-2007 SCH
© by SEMIKRON
SEMiX 503GB126HDs
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMiX
®
3s
Trench IGBT Modules
Module
SEMiX 503GB126HDs
Preliminary Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
19-04-2007 SCH
© by SEMIKRON
SEMiX 503GB126HDs
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
19-04-2007 SCH
© by SEMIKRON
SEMiX 503GB126HDs
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
19-04-2007 SCH
© by SEMIKRON
SEMiX 503GB126HDs
5
19-04-2007 SCH
© by SEMIKRON
