d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73899
S09-0766-Rev. B, 04-May-09
www.vishay.com
1
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
51
32
Maximum
62.5
39
Unit
°C/W
Si3437DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 1.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 1 A, V
GS
= 0 V
- 0.8
60
120
35
25
T
C
= 25 °C
- 1.4
-5
- 1.2
90
180
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 150 V, V
GS
= 0 V
V
DS
= - 150 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 1.4 A
V
GS
= - 6 V, I
D
= - 1 A
V
DS
= - 10 V, I
D
= - 1.4 A
Min.
- 150
Typ.
Max.
Unit
V
- 160
5.5
-2
-4
± 100
-1
- 10
-3
0.61
0.64
4.5
510
0.75
0.79
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 75 V, V
GS
= - 10 V, I
D
= - 1 A
V
DS
= - 75 V, V
GS
= - 6 V, I
D
= - 1 A
f = 1 MHz
V
DD
= - 75 V, R
L
= 75
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 1
Ω
30
21
12.2
8
2.1
3.9
8.5
9
11
28
12
14
13
15
18
42
18
21
44
35
21
19
12
pF
nC
Ω
ns
V
DD
= - 75 V, R
L
= 75
Ω
I
D
≅
- 1 A, V
GEN
= - 6 V, R
g
= 1
Ω
29
23
14
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73899
S09-0766-Rev. B, 04-May-09
Si3437DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
8
25 °C, unless otherwise noted
1.5
V
GS
= 10
V
thru 6
V
6
I D - Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.2
0.9
4
5
V
0.6
25 °C
0.3
T
C
= 125 °C
2
0
0
2
4
6
8
10
0.0
0
2
4
- 55 °C
6
8
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
1.4
750
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
1.2
C - Capacitance (pF)
600
C
iss
1.0
450
0.8
V
GS
= 6
V
V
GS
= 10
V
0.6
300
150
C
oss
C
rss
0.4
0.0
0
1.6
3.2
4.8
6.4
8.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 1 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
V
DS
= 75
V
6
V
DS
= 50
V
4
V
DS
= 100
V
R
DS(on)
- On - Resistance
2.0
2.4
I
D
= 1.2 A
Capacitance
(
N
ormalized)
1.6
V
GS
= 10
V
V
GS
= 6
V
1.2
2
0.8
0
0
2.6
5.2
7.8
10.4
13
0.4
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73899
S09-0766-Rev. B, 04-May-09
www.vishay.com
3
Si3437DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
5
I
D
= 1.2 A
R
DS(on)
- Drain-to-Source (Ω)
4
I
S
- So
u
rce C
u
rrent (A)
1
T
J
= 150 °C
T
J
= 25 °C
3
2
125 °C
1
25 °C
0.1
0.01
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain
Voltage
(V)
0
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
60
On-Resistance vs. Gate-to-Source Temperature
0.6
V
GS(th)
-
V
ariance (
V
)
I
D
= 250
µA
Po
w
er (
W
)
48
0.4
36
0.2
I
D
= 5 mA
24
0.0
12
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
1
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
*
V
GS
1000
100
1
10
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
1s
10 s
DC
0.1
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73899
S09-0766-Rev. B, 04-May-09
Si3437DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
1.6
25 °C, unless otherwise noted
1.3
Po
w
er (
W
)
1.0
0.6
0.3
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
Po
w
er (
W
)
1.6
Po
w
er (W)
0
25
50
75
100
125
150
2.4
0.9
0.6
0.8
0.3
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
