Si4390DY
New Product
Vishay Siliconix
N-Channel Q
g
, Fast Switching WFETt
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
D
Extremely Low Q
gd
WFET Technology for
Switching Losses
D
TrenchFETr Power MOSFET
I
D
(A)
12.5
10.5
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.0135 @ V
GS
= 4.5 V
APPLICATIONS
D
High-Side DC/DC Conversion
- Notebook
- Server
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4390DY
Si4390DY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
S
N-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"20
12.5
Steady State
Unit
V
8.5
6.8
20
A
I
D
I
DM
I
S
P
D
T
J
, T
stg
10
2.7
3.0
1.9
-55 to 150
1.3
1.4
0.9
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
32
68
15
Maximum
42
90
20
Unit
_C/W
C/W
1
Si4390DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 10.5 A
V
DS
= 15 V, I
D
= 12.5 A
I
S
= 2.7 A, V
GS
= 0 V
30
0.0075
0.0105
38
0.7
1.1
0.0095
0.0135
S
V
0.8
2.8
"100
1
5
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.7 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.5 A
10
3.5
2.1
0.8
16
6
43
14
35
30
12
70
25
60
ns
W
15
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
Transfer Characteristics
30
3V
30
20
20
T
C
= 125_C
10
25_C
-55_C
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
2
Si4390DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030
r
DS(on)
- On-Resistance (
W
)
1800
C
iss
C - Capacitance (pF)
0.024
1500
Vishay Siliconix
Capacitance
1200
0.018
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.006
900
C
oss
600
C
rss
300
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 12.5 A
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 12.5 A
4
r
DS(on)
- On-Resistance (
W)
(Normalized)
6
9
12
15
5
1.6
1.4
3
1.2
2
1.0
1
0.8
0
0
3
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.040
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
T
J
= 150_C
10
r
DS(on)
- On-Resistance (
W
)
0.032
0.024
I
D
= 12.5 A
1
T
J
= 25_C
0.016
0.008
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
3
Si4390DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
-0.0
-0.2
-0.4
40
-0.6
-0.8
-50
0
0.001
I
D
= 250
mA
Power (W)
120
200
Single Pulse Power
160
V
GS(th)
Variance (V)
80
-25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Case
100
Limited by
r
DS(on)
10
I
D
- Drain Current (A)
10 ms
1
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
1 ms
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72150
S-03920—Rev. B, 19-May-03
Si4390DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72150
S-03920—Rev. B, 19-May-03
www.vishay.com
5
