Si4435DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–30
r
DS(on)
(W)
0.02 @ V
GS
= –10 V
0.035 @ V
GS
= –4.5 V
I
D
(A)
"8.0
"6.0
S S S
SO-8
S
S
S
G
1
2
3
4
Top View
D D D D
P-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_ UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–30
"20
"8.0
"6.4
"50
–2.1
2.5
Unit
V
A
W
1.6
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70149
S-49534—Rev. F, 06-Oct-97
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Symbol
R
thJA
Limit
50
Unit
_C/W
2-1
Si4435DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –15 V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
–5 V, V
GS
= –10 V
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= –8.0 A
V
GS
= –4.5 V, I
D
= –5.0 A
V
DS
= –15 V, I
D
= –8.0 A
I
S
= –2.1 A, V
GS
= 0 V
–40
A
–10
0.015
0.022
20
–0.75
–1.2
0.02
0.035
W
S
V
–1.0
"100
–1
–5
V
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State Drain Current
b
I
D(on)
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
r
DS(on)
g
fs
V
SD
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –2.1 A, di/dt = 100 A/ms
V
DD
= –15 V, R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V R
G
= 6
W
1A
10 V,
V
DS
= –15 V V
GS
= –10 V I
D
= –4.6 A
15 V,
10 V,
46
47
9.5
8
16
17
75
31
40
30
30
120
80
80
ns
60
nC
C
Notes
a. Guaranteed by design, not subject to production testing. Values shown are for Product Revision A.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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FaxBack 408-970-5600
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Document Number: 70149
S-49534—Rev. F, 06-Oct-97
Si4435DY
Vishay Siliconix
TYPICAL CHARACTERISTICS, PRODUCT REVISION A (25_C UNLESS NOTED)
Output Characteristics
50
50
T
C
= -55° C
40
I
D
– Drain Current (A)
V
GS
= 10 thru 5 V
I
D
– Drain Current (A)
40
25° C
125° C
30
Transfer Characteristics
30
4V
20
20
10
3V
0
0
2
4
6
8
10
10
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.150
4500
Capacitance
0.125
r
DS(on)
– On-Resistance (
Ω
)
C – Capacitance (pF)
3600
C
iss
0.100
2700
0.075
1800
C
oss
900
C
rss
0.050
V
GS
= 4.5 V
0.025
V
GS
= 10 V
0
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
– Drain Current (A)
10
V
DS
= 15 V
I
D
= 4.6 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 8.0 A
V
GS
– Gate-to-Source Voltage (V)
8
6
4
2
0
0
10
20
30
40
50
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
Document Number: 70149
S-49534—Rev. F, 06-Oct-97
T
J
– Junction Temperature (_C)
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Si4435DY
Vishay Siliconix
TYPICAL CHARACTERISTICS, PRODUCT REVISION A (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
10
T
J
= 150_C
r
DS(on)
– On-Resistance (
Ω
)
0.08
0.06
0.04
T
J
= 25_C
I
D
=
8.0
A
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.8
0.6
0.4
V
GS(th)
Variance (V)
Threshold Voltage
80
Single Pulse Power
60
I
D
= 250
µA
0.2
–0.0
–0.2
–0.4
–0.6
–50
Power (W)
40
20
–25
0
25
50
75
100
125
150
0
0.01
0.10
1.00
Time (sec)
10.00
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
2. Per Unit Base = R
thJA
= 50_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70149
S-49534—Rev. F, 06-Oct-97
