Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
−55
to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72956
S-60075Rev. B, 23-Jan-06
www.vishay.com
1
SPICE Device Model Si8902EDB
Vishay Siliconix
SPECIFICATIONS (T
J
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
On-State Drain Current
a
V
GS(th)
I
ss(on)
V
sS
= V
GS
, I
D
= 250
µA
V
sS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
ss
= 1 A
Drain-Source On-State Resistance
a
R
sS(on)
V
GS
= 3.7 V, I
ss
= 1 A
V
GS
= 2.5 V, I
ss
= 1 A
V
GS
= 1.8 V, I
ss
= 1 A
Forward Transconductance
a
Symbol
Test Condition
Simulated
Data
0.51
109
0.038
0.040
0.046
0.057
11
Measured
Data
Unit
V
A
0.038
0.041
0.048
0.060
20
S
Ω
g
fs
V
sS
= 10 V, I
SS
= 1 A
Dynamic
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
ss
= 10 V, R
L
= 10
Ω
I
ss
≅
1 A, V
GEN
= 4.5 V, R
G
= 6
Ω
4
2
7
4
1
3
17
10
µs
Notes
a. Pulse test; pulse width
≤
300
µs,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72956
S-60075Rev. B, 23-Jan-06
SPICE Device Model Si8902EDB
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (T
J
=25°C UNLESS OTHERWISE NOTED)
Document Number: 72956
S-60075Rev. B, 23-Jan-06
www.vishay.com
3
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