型号
- 型号
- 关键词
2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
2.7 A, 60 V, 0.2 ohm, N沟道, 硅, POWER, 场效应管, TO-261AA
厂商名称：Vishay(威世)
器件标准：
| 型号 | SIHFL014T-E3 | IRFL014_10 | SIHFL014-GE3 | SIHFL014TR-GE3 | SIHFL014 | SIHFL014-E3 | SIHFL014T |
|---|---|---|---|---|---|---|---|
| 描述 | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA | 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 表面贴装 | YES | Yes | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | 双 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | 开关 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | 硅 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否无铅 | 不含铅 | - | 不含铅 | 不含铅 | 含铅 | 不含铅 | 含铅 |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 不符合 | 符合 | 不符合 |
| 厂商名称 | Vishay(威世) | - | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | - | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| 针数 | 4 | - | 4 | 4 | 4 | 4 | 4 |
| Reach Compliance Code | unknow | - | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 100 mJ | - | - | - | 100 mJ | 100 mJ | 100 mJ |
| 外壳连接 | DRAIN | - | DRAIN | DRAIN | - | DRAIN | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (Abs) (ID) | 2.7 A | - | 2.7 A | 2.7 A | 2.7 A | 2.7 A | 2.7 A |
| 最大漏极电流 (ID) | 2.7 A | - | 2.7 A | 2.7 A | 2.7 A | 2.7 A | 2.7 A |
| 最大漏源导通电阻 | 0.2 Ω | - | 0.2 Ω | 0.2 Ω | 0.2 Ω | 0.2 Ω | 0.2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G4 | - | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609代码 | e3 | - | e3 | e3 | e0 | e3 | e0 |
| 湿度敏感等级 | 1 | - | 1 | 1 | - | 1 | - |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | - | 260 | 260 | 240 | 260 | 240 |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 3.1 W | - | 3.1 W | 3.1 W | 3.1 W | 3.1 W | 3.1 W |
| 最大脉冲漏极电流 (IDM) | 22 A | - | - | - | 22 A | 22 A | 22 A |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 端子面层 | Matte Tin (Sn) | - | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
| 处于峰值回流温度下的最长时间 | 40 | - | 40 | 40 | 30 | 40 | 30 |
模拟与混合信号
FPGA/CPLD
stm32/stm8
电源技术
RF/无线
模拟电子