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IRLR110, IRLU110, SiHLR110, SiHLU110

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= 5.0 V

6.1

2.0

3.3

Single

DPAK

(TO-252)

FEATURES

100

0.54

•

Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRLR110, SiHLR110)

• Straight Lead (IRLU110, SiHLU110)

• Available in Tape and Reel

• Logic-Level Gate Drive

• R

DS(on)

Specified at V

= 4 V and 5 V

• Compliant to RoHS Directive 2002/95/EC

IPAK

(TO-251)

DESCRIPTION

D S

N-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SnPb

Note

a. See device orientation.

DPAK (TO-252)

SiHLR110-GE3

IRLR110PbF

SiHLR110-E3

IRLR110

SiHLR110

DPAK (TO-252)

SiHLR110TR-GE3

IRLR110TRPbF

SiHLR110T-E3

IRLR110TR

SiHLR110T

DPAK (TO-252)

SiHLR110TRL-GE3

IRLR110TRLPbF

SiHLR110TL-E3

IRLR110TRL

SiHLR110TL

IPAK (TO-251)

SiHLU110-GE3

IRLU110PbF

SiHLU110-E3

IRLU110

SiHLU110

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Current

at 5.0 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

100

± 10

4.3

2.7

0.20

0.020

100

4.3

2.5

5.5

- 55 to + 150

260

UNIT

W/°C

V/ns

°C

= 25 °C

dV/dt

, T

stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 8.1 mH, R

= 25

Ω,

= 4.3 A (see fig. 12).

c. I

≤

5.6 A, dI/dt

≤

140 A/μs, V

≤

, T

≤

150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91323

S10-1139-Rev. C, 17-May-10

www.vishay.com

IRLR110, IRLU110, SiHLR110, SiHLU110

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient

(PCB Mount)

Maximum Junction-to-Case (Drain)

SYMBOL

thJA

thJC

MIN.

TYP.

MAX.

110

5.0

°C/W

UNIT

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS

= 25 °C, unless otherwise noted

PARAMETER

Static

Drain-Source Breakdown Voltage

Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulsed Diode Forward

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

ΔV

GS(th)

GSS

DSS

DS(on)

iss

oss

rss

d(on)

d(off)

= 0 V, I

= 250 μA

Reference to 25 °C, I

= 1 mA

= V

, I

= - 250 μA

= ± 10 V

= 100 V, V

= 0 V

= 80 V, V

= 0 V, T

= 125 °C

= 5.0 V

= 4.0 V

= 2.6 A

= 2.2 A

100

1.0

2.3

0.12

250

9.3

4.5

7.5

2.0

± 100

250

0.54

0.76

6.1

2.0

3.3

V/°C

μA

= 50 V, I

= 2.6 A

= 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

= 5.6 A, V

= 80 V,

see fig. 6 and 13

= 5.0 V

= 50 V, I

= 5.6 A,

= 12

Ω,

= 8.4

Ω,

see fig. 10

Between lead,

6 mm (0.25") from

package and center of

die contact

100

0.50

4.3

2.5

130

0.65

μC

= 25 °C, I

=4.3 A, V

= 0 V

= 25 °C, I

= 5.6 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by L

and L

)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤

300 μs; duty cycle

≤

2 %.

www.vishay.com

Document Number: 91323

S10-1139-Rev. C, 17-May-10

IRLR110, IRLU110, SiHLR110, SiHLU110

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, T

= 25 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, T

= 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91323

S10-1139-Rev. C, 17-May-10

www.vishay.com

IRLR110, IRLU110, SiHLR110, SiHLU110

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

Document Number: 91323

S10-1139-Rev. C, 17-May-10

IRLR110, IRLU110, SiHLR110, SiHLU110

Vishay Siliconix

D.U.T.

- V

5.0 V

Pulse width

≤

1 µs

Duty factor

≤

0.1 %

Fig. 10a - Switching Time Test Circuit

90 %

10 %

d(on)

d(off)

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91323

S10-1139-Rev. C, 17-May-10

www.vishay.com

参数对比

与SIHLU110-E3相近的元器件有：SIHLR110、SIHLR110-E3、SIHLR110T、SIHLR110TL、SIHLR110TL-E3、SIHLU110。描述及对比如下：

型号	SIHLU110-E3	SIHLR110	SIHLR110-E3	SIHLR110T	SIHLR110TL	SIHLR110TL-E3	SIHLU110
描述	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
是否无铅	不含铅	含铅	不含铅	含铅	含铅	不含铅	含铅
是否Rohs认证	符合	不符合	符合	不符合	不符合	符合	不符合
零件包装代码	TO-251	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251
包装说明	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
针数	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
雪崩能效等级（Eas）	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (Abs) (ID)	4.3 A	4.3 A	4.3 A	4.3 A	4.3 A	4.3 A	4.3 A
最大漏极电流 (ID)	4.3 A	4.3 A	4.3 A	4.3 A	4.3 A	4.3 A	4.3 A
最大漏源导通电阻	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-251	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251
JESD-30 代码	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
JESD-609代码	e3	e0	e3	e0	e0	e3	e0
元件数量	1	1	1	1	1	1	1
端子数量	3	2	2	2	2	2	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
峰值回流温度（摄氏度）	260	240	260	240	240	NOT SPECIFIED	240
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	25 W	25 W	25 W	25 W	25 W	25 W	25 W
最大脉冲漏极电流 (IDM)	17 A	17 A	17 A	17 A	17 A	17 A	17 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	YES	YES	YES	YES	NO
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	30	40	30	30	NOT SPECIFIED	30
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	-	Vishay(威世)