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SKM100GB121D

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,

器件类别:分立半导体    晶体管   

厂商名称:SEMIKRON

厂商官网:http://www.semikron.com

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器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code
unknown
外壳连接
ISOLATED
最大集电极电流 (IC)
100 A
集电极-发射极最大电压
1200 V
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
门极发射器阈值电压最大值
6.5 V
门极-发射极最大电压
20 V
JESD-30 代码
R-PUFM-X7
元件数量
2
端子数量
7
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
N-CHANNEL
功耗环境最大值
1250 W
最大功率耗散 (Abs)
625 W
认证状态
Not Qualified
表面贴装
NO
端子形式
UNSPECIFIED
端子位置
UPPER
晶体管应用
MOTOR CONTROL
晶体管元件材料
SILICON
标称断开时间 (toff)
350 ns
标称接通时间 (ton)
100 ns
VCEsat-Max
4 V
Base Number Matches
1
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参数对比
与SKM100GB121D相近的元器件有:SKM100GB122D、SKM100GAR121D、SKM100GAL121D、SKM100GAR122D、SKM100GAL101D、SKM100GB101D、SKM100GAR101D。描述及对比如下:
型号 SKM100GB121D SKM100GB122D SKM100GAR121D SKM100GAL121D SKM100GAR122D SKM100GAL101D SKM100GB101D SKM100GAR101D
描述 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel
包装说明 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7 FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 100 A 100 A 100 A 100 A 100 A 100 A 100 A 100 A
集电极-发射极最大电压 1200 V 1200 V 1200 V 1200 V 1200 V 1000 V 1000 V 1000 V
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V
门极-发射极最大电压 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
JESD-30 代码 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7 R-PUFM-X7
元件数量 2 2 1 1 1 1 2 1
端子数量 7 7 7 7 7 7 7 7
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
功耗环境最大值 1250 W 1250 W 625 W 625 W 625 W 625 W 1250 W 625 W
最大功率耗散 (Abs) 625 W 625 W 625 W 625 W 625 W 625 W 625 W 625 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
晶体管应用 MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称断开时间 (toff) 350 ns 350 ns 350 ns 350 ns 350 ns 350 ns 350 ns 350 ns
标称接通时间 (ton) 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
VCEsat-Max 4 V 4 V 4 V 4 V 4 V 4 V 4 V 4 V
厂商名称 - - - SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON
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