SPN09T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
Powered System
The SPN09T10 is the N-Channel logic enhancement mode
DC/DC Converter
power field effect transistor which is produced using super
Load Switch
high cell density DMOS trench technology. The SPN09T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast switching
speed.
FEATURES
100V/8A,R
DS(ON)
=
160mΩ@V
GS
= 10V
High density cell design for
extremely low RDS (ON)
Exceptional on-resistance and
maximum DC current
capability
TO-252,TO-251,TO-263
package design
PIN CONFIGURATION
TO-251
TO-252
TO-263
G D
S
PART MARKING
SPN09T10
AAAAAA
BBBBBB
A: Lot Code
B: Date Code
2012/07/03
Ver.5
Page 1
SPN09T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN09T10
SPN09T10
SPN09T10
SPN09T10T252RGB
TO-252
SPN09T10T251TGB
TO-251
SPN09T10T263TGB
TO-263
※
SPN09T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
※
SPN09T10T251RGB : Tube ; Pb – Free ; Halogen - Free
※
SPN09T10T263RGB : Tube ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Avalanche Current
Power Dissipation
T
A
=25℃
TO-252-2L
TO-251
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
P
D
EAS
T
J
T
STG
R
θJA
Typical
100
±20
14
9.0
45
14
40
55
28
-55/150
-55/150
100
Unit
V
V
A
A
A
W
mJ
℃
℃
℃/W
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.14mH , I
AS
= 20A , V
DD
= 20V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
2012/07/03
Ver.5
Page 2
SPN09T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
=125℃
V
DS
≥5V,V
GS
=10V
100
1
3
±100
25
250
9
0.110
5.6
1.3
0.160
V
nA
uA
A
Ω
S
V
R
DS(on)
V
GS
= 10V,I
D
=10A
gfs
V
SD
V
DS
=10V,I
D
=5A
I
S
=9A,V
GS
=0V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,R
L
=10Ω
I
D
≡5A,V
GEN
=10V
R
G
=3.3Ω
V
DS
=25,V
GS
=0V
f=1MHz
V
DS
=80V,V
GS
=10V
I
D
= 5A
10
2.5
4.5
430
56
35
6.5
10
13
3.4
16
nC
pF
nS
2012/07/03
Ver.5
Page 3
SPN09T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2012/07/03
Ver.5
Page 4
SPN09T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2012/07/03
Ver.5
Page 5
