STB21NM60ND, STF21NM60ND,
STP21NM60ND, STW21NM60ND
N-channel 600 V, 0.17
Ω
typ., 17 A FDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet
-
production data
Features
TAB
Order codes
3
1
1
2
3
V
DSS @
T
J
max
650 V
650 V
650 V
650 V
R
DS(on)
max
0.22
Ω
0.22
Ω
0.22
Ω
0.22
Ω
I
D
17 A
17 A
17 A
17 A
D
2
PAK
TAB
TO-220FP
STB21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
•
Intrinsic fast-recovery body diode
3
1
2
3
2
1
TO-220
TO-247
•
Worldwide best R
DS(on)
*area amongst the fast
recovery diode devices
•
100% avalanche tested
•
Low input capacitance and gate charge
•
Low gate input resistance
•
Extremely high dv/dt and avalanche
capabilities
Figure 1. Internal schematic diagram
Applications
•
Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Table 1. Device summary
Order codes
STB21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
Marking
21NM60ND
21NM60ND
21NM60ND
21NM60ND
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
March 2013
This is information on a product in full production.
DocID13781 Rev 5
1/21
www.st.com
21
Contents
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/21
DocID13781 Rev 5
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220, D
2
PAK
TO-247
600
±25
17
10
68
140
40
17
(1)
10
(1)
68
(1)
30
Unit
TO-220FP
V
V
A
A
A
W
V/ns
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
Storage temperature
Max. operating junction temperature
Viso
2500
V
T
stg
T
J
- 55 to 150
150
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3.
I
SD
≤
17 A, di/dt
≤
600 A/μs, V
DD
= 80% V
(BR)DSS;
V
DS(peak)
≤
V
(BR)DSS
Table 3. Thermal data
Value
Symbol
Parameter
D²PAK
Rthj-case
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
0.89
TO-220FP
4.17
TO-220
TO-247
°C/W
Unit
0.89
Rthj-amb
62.5
50
°C/W
Table 4. Avalanche characteristics
Symbol
I
AS
Parameter
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Max value
8.5
Unit
A
E
AS
610
mJ
DocID13781 Rev 5
3/21
Electrical characteristics
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Value
Symbol
Parameter
Test conditions
Min.
V
(BR)DSS
dv/dt
(1)
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source
on-resistance
I
D
= 1 mA, V
GS
= 0
V
DD
= 480 V, I
D
= 17 A,
V
GS
= 10 V
V
DS
= 600 V
V
DS
= 600 V, T
C
=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 8.5 A
3
4
0.170
600
Typ.
Max.
V
Unit
48
1
100
±100
5
0.220
V/ns
μA
μA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Characteristic value at turn off on inductive load
Table 6. Dynamic
Symbol
C
iss
C
oss
C
rss
C
oss eq.(1)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
Typ.
1800
90
8
Max.
Unit
pF
pF
pF
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-
-
V
GS
= 0, V
DS
= 0 to 480 V
V
DD
=300 V, I
D
= 8.5 A
R
G
= 4.7
Ω,
V
GS
= 10 V
(see Figure 23),
(see Figure 18)
V
DD
= 480 V, I
D
= 17 A,
V
GS
= 10 V,
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
-
300
18
16
70
48
60
10
30
-
pF
ns
ns
ns
ns
nC
nC
nC
Ω
-
-
-
-
R
G
Gate input resistance
-
3
-
1. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/21
DocID13781 Rev 5
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
I
SD
I
SDM
(1)
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min.
Typ.
Max.
17
68
Unit
A
A
V
ns
μC
A
ns
μC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
I
SD
= 17 A, V
GS
= 0
I
SD
= 17 A, V
DD
= 60 V
di/dt=100 A/μs
(see Figure 20)
I
SD
= 17 A,V
DD
= 60 V
di/dt=100 A/μs,
T
J
= 150 °C
(see Figure 20)
150
0.90
13
210
1.6
15
1.6
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300
μs,
duty cycle 1.5%.
DocID13781 Rev 5
5/21
