STP11NC40, STP11NC40FP
N-CHANNEL 400V - 0.44Ω - 9.5A TO-220/TO-220FP
PowerMESH™II Power MOSFET
TYPE
STP11NC40
STP11NC40FP
s
s
s
s
s
V
DSS
400 V
400 V
R
DS(on)
< 0.55
Ω
< 0.55
Ω
I
D
9.5 A
9.5 A(*)
Pw
120 W
30 W
TYPICAL R
DS
(on) = 0.44
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-220
3
1
2
TO-220FP
DESCRIPTION
The PowerMESH
™
II is the evolution of the first
generation of MESH OVERLAY
™.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
s
ORDERING INFORMATION
SALES TYPE
STP11NC40
STP11NC40FP
MARKING
P11NC40
P11NC40FP
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
January 2002
1/10
STP11NC40, STP11NC40FP
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
j
T
stg
Parameter
STP11NC40
Value
STP11NC40FP
Unit
V
V
V
9.5 (*)
6 (*)
38 (*)
30
0.24
A
A
A
W
W/°C
V/ns
2500
V
°C
°C
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
-
9.5
6
38
120
0.96
400
400
± 30
3.5
-55 to 150
-55 to 150
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤9.5A,
di/dt
≤100A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
1.04
62.5
300
TO-220FP
4.1
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
9.5
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5 A
2
3
0.44
Min.
400
1
50
±100
4
0.55
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
2/10
STP11NC40, STP11NC40FP
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DS
= 15 V
,
I
D
= 5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
8.6
995
172
25
Max.
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Test Conditions
V
DD
= 200 V, I
D
= 5 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 320V, I
D
= 10 A,
V
GS
= 10V
Min.
Typ.
15
18
32.5
6
15
45.5
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 320 V, I
D
= 5 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 320V, I
D
= 10 A,
R
G
= 4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
43
15
7.5
14
23
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 9.5 A, V
GS
= 0
I
SD
= 9.5 A, di/dt = 100A/µs
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
315
2100
13.6
Test Conditions
Min.
Typ.
Max.
9.5
38
1.6
Unit
A
A
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
3/10
STP11NC40, STP11NC40FP
Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/10
STP11NC40, STP11NC40FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized
Gate
Threshold
Voltage Temperature
vs
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
5/10
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