型号
- 型号
- 关键词
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
厂商名称：ST(意法半导体)
厂商官网：http://www.st.com/
器件标准：
| 型号 | STP11NM60AFP | STP11NM60A | STB11NM60A-1 |
|---|---|---|---|
| 描述 | 11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 零件包装代码 | TO-220AB | TO-220AB | TO-262AA |
| 包装说明 | TO-220FP, 3 PIN | TO-220, 3 PIN | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | _compli | _compli | unknow |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 600 V | 600 V | 600 V |
| 最大漏极电流 (Abs) (ID) | 11 A | 11 A | 11 A |
| 最大漏极电流 (ID) | 11 A | 11 A | 11 A |
| 最大漏源导通电阻 | 0.45 Ω | 0.45 Ω | 0.45 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB | TO-262AA |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | IN-LINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 35 W | 110 W | 110 W |
| 最大脉冲漏极电流 (IDM) | 44 A | 44 A | 44 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 符合 | 符合 | - |
| 厂商名称 | ST(意法半导体) | ST(意法半导体) | - |
| JESD-609代码 | e3 | e3 | - |
| 湿度敏感等级 | 1 | 1 | - |
| 峰值回流温度（摄氏度） | 245 | 245 | - |
| 端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - |