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SUF4002

1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB

器件类别:分立半导体    二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
零件包装代码
DO-213AB
制造商包装代码
DO-213AB
文档预览
SUF4001-SUF4007
Surface Mount Rectifiers
REVERSE VOLTAGE: 50 - 1000 V
CURRENT: 1.0 A
DO - 213AB
Features
D1
2.6± 0.15
SOLDERABLE ENDS
D2=D1
0
0.20
Glass passivated device
Ideal for surface mouted applications
Low leakage current
Metallurgically bonded construction
D2
Mechanical Data
Case:JEDEC DO-213AB,molded plastic over
passivated chip
Polarity: Color band denotes cathode end
Weight: 0.0046 ounces, 0.116 gram
Mounting position: Any
0.5± 0.1
4.9± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
SUF
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword
rectified current
T
A
=50℃
SUF
100
70
100
SUF
200
140
200
SUF
4004
400
280
400
1.0
SUF
4005
600
420
600
SUF
4006
800
560
800
SUF
4007
1000
700
1000
4001 4002 4003
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
UNITS
V
V
V
A
Peak forward surge current 8.3ms single
half-sine-wave superimposed
on rated load (JEDEC method)
Maximum forward voltage at 1.0A
Maximum DC reverse current
@T
j
=25℃
I
FSM
V
F
I
R
t
rr
50
1.0
30
1.7
10
50
75
10
45
- 55 --- + 175
- 55 --- + 175
A
V
µA
ns
K/W
K/W
at rated DC blockjing voltage @T
j
=100℃
Maximum reverse recovery time (Note1)
Typical thermal resistance
Typical thermal resistance
(NOTE 2)
(NOTE 3)
Operating temperature range
Storage temperature range
R
θJ
T
R
θJ
A
T
j
T
STG
NOTES:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Thermal resistance junction to terminal, 6.0 mm
2
coppeer pads to each terminal.
3. Thermal resistance junction to ambient, 6.0 mm
2
coppeer pads to each terminal.
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mail:lge@luguang.cn
SUF4001-SUF4007
Surface Mount Rectifiers
Ratings AND Charactieristic Curves
PEAK FORWARD SURGE CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
1
2
4
6 8 10
20
40
60 80 100
1.0
.8
.6
.4
.2
0
0
25
50
75
100 125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
8.3ms Single Half Sine-Wave
(JEDED Method)
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
10
10
4.0
2.0
SUF4001-SUF4004
SUF4005-SUF4007
TJ = 100
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
T
J
=25
Pulse Width=300
µ
s
.4
.1
.04
TJ = 25
.01
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
(+)
50VDC
(approx)
(-)
1
NONIN-
DUCTIVE
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
-1.0A
1 c m
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
22pF.
SET TIME BASE FOR 25 ns/cm
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参数对比
与SUF4002相近的元器件有:SUF4001、ISO7841_15、2SD1409_15、SUF4007、MSAD100-16、SUF4005。描述及对比如下:
型号 SUF4002 SUF4001 ISO7841_15 2SD1409_15 SUF4007 MSAD100-16 SUF4005
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB ISO7841 ISO7841F High-Performance, 8000 VPK Reinforced Quad-Channel Digital Isolator Silicon NPN Power Transistors 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB Glass Passivated Rectifier Diode Modules 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
零件包装代码 DO-213AB DO-213AB - - DO-213AB - DO-213AB
制造商包装代码 DO-213AB DO-213AB - - DO-213AB - DO-213AB
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