Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Repetitive peak off-stage voltage
(1)
(T
J
= -40 to +100°C, gate open)
T2800B
T2800C
T2800D
T2800E
T2800M
RMS on-state current
(conduction angle = 360°, T
C
= 80°C)
Peak non-repetitive surge current
(One Cycle, 60Hz, T
J
= 80°C)
Circuit fusing considerations
(T
J
= -40 to +100°C, t = 1.25 to 10ms)
Peak gate power
(pulse width = 1.0µs)
Average gate power
Peak gate trigger current
(pulse width = 1.0µs)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
200
300
400
500
600
8
100
50
16
0.35
4
-40 to +100
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Symbol
R
Ө
JC
Max
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Peak off state current
(Rated V
DRM
@ T
C
= 100°C, gate open)
Peak on-state voltage
(I
TM
= 30A peak)
DC gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 12Ω)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
DC gate trigger voltage
(continuous dc) all polarities
(V
D
= 12V, R
L
= 100Ω)
(V
D
= V
DRM
, R
L
= 125Ω, T
C
= 100°C)
Holding current
(either direction)
(V
D
= 12V, gate open, I
T
= 125mA)
Gate controlled turn on time
(V
D
= Rated V
DRM
, I
T
= 10A, I
GT
= 80mA, rise time = 0.1µs)
Critical rate of rise of commutating voltage
(Rated V
DRM
, I
T(RMS)
= 8A, commutating di/dt = 4.3A/ms, gate unenergized, T
微控制器 MCU
