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TIP130

POWER TRANSISTOR
功率晶体管

器件类别:分立半导体    晶体管   

厂商名称:COMSET

厂商官网:http://comset.halfin.com/

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器件参数
参数名称
属性值
包装说明
,
Reach Compliance Code
unknow
最大集电极电流 (IC)
8 A
配置
DARLINGTON
最小直流电流增益 (hFE)
1000
最高工作温度
150 °C
极性/信道类型
NPN
最大功率耗散 (Abs)
70 W
表面贴装
NO
Base Number Matches
1
文档预览
SEMICONDUCTORS
NPN TIP130 – 131 – 132
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intented for use in power linear and switching applications.
The complementary PNP types are TIP135/136/137
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Ratings
Collector-Base Voltage (I
E
= 0)
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
Value
60
80
100
60
80
100
5
8
12
0.3
70
2
150
-65 to +150
Unit
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
t
J
t
s
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (1)
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
T
case
t
amb
V
V
A
A
A
W
°C
@ T
mb
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.78
62.5
Unit
°C/W
30/10/2012
09/11/2012
COMSET SEMICONDUCTORS
1/3
SEMICONDUCTORS
NPN TIP130 – 131 – 132
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
I
C
= 30 mA
I
B
= 0
V
CB
= V
CEO
I
E
= 0
V
CB
= V
CEO
I
E
= 0
T
C
=100°C
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
EB
= 5 V
I
C
= 0
I
C
= 4A
I
B
= 16 mA
I
C
= 6 A
I
B
= 30 mA
V
CE
= 4 V
I
C
= 4 A
V
CE
= 4 V
I
C
= 1 A
V
CE
= 4 V
I
C
= 4 A
V
CB
=10 V
I
E
=0
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
Min
60
80
100
-
-
-
-
-
-
-
-
-
-
-
-
-
500
1000
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.2
0.2
0.2
1
1
1
0.5
0.5
0.5
5
2
Unit
V
I
CBO
Collector-Emitter sustaining
Current
mA
I
CEO
Collector-Emitter Cutoff
Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Forward Current transfer
ratio (*)
Output Capacitance
A
mA
I
EBO
V
CE(SAT)
V
3
2.5
-
1500
0
200
-
V
V
BE
h
FE
C
OBO
pF
(*) Pulse Width
300
µs,
Duty Cycle
2.0%
30/10/2012
09/11/2012
COMSET SEMICONDUCTORS
2/3
SEMICONDUCTORS
NPN TIP130 – 131 – 132
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
Revised August 2012
         
 
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
 
www.comsetsemi.com
30/10/2012
09/11/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
3/3
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参数对比
与TIP130相近的元器件有:TIP131、TIP132。描述及对比如下:
型号 TIP130 TIP131 TIP132
描述 POWER TRANSISTOR POWER TRANSISTOR 8 A, NPN, Si, POWER TRANSISTOR, TO-220AB
Reach Compliance Code unknow unknow unknown
最大集电极电流 (IC) 8 A 8 A 8 A
配置 DARLINGTON DARLINGTON DARLINGTON
最小直流电流增益 (hFE) 1000 1000 1000
最高工作温度 150 °C 150 °C 150 °C
极性/信道类型 NPN NPN NPN
最大功率耗散 (Abs) 70 W 70 W 70 W
表面贴装 NO NO NO
厂商名称 - COMSET COMSET
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