型号
- 型号
- 关键词
MOSFET N-CH Enhancmnt Mode MOSFET
厂商名称：Microchip(微芯科技)
厂商官网：https://www.microchip.com
下载文档| 型号 | TN5325N3-G-P014 | TN5325K1 | TN5325N3-G-P005 | TN5325N3-G | TN5325N3-G-P013 | TN5325N8-G | TN5325N3 | TN5325N3-G-P003 | TN5325N3-G-P002 |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 250V 7Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | Headers u0026 Wire Housings 4 CKT VERT HEADER | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 400V N-Chan UniFET | MOSFET 250V 7Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET N-CH Enhancmnt Mode MOSFET |
| 制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | - | Microchip(微芯科技) | - | Microchip(微芯科技) | Microchip(微芯科技) | - |
| 产品种类 Product Category |
MOSFET | MOSFET | MOSFET | - | MOSFET | - | MOSFET | MOSFET | - |
| RoHS | Details | No | Details | - | Details | - | No | Details | - |
| 技术 Technology |
Si | Si | Si | - | Si | - | Si | Si | - |
| 安装风格 Mounting Style |
Through Hole | SMD/SMT | Through Hole | - | Through Hole | - | Through Hole | Through Hole | - |
| 封装 / 箱体 Package / Case |
TO-92-3 | SOT-23-3 | TO-92-3 | - | TO-92-3 | - | TO-92-3 | TO-92-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | - | 1 Channel | - | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | - | N-Channel | - | N-Channel | N-Channel | - |
| Vds - Drain-Source Breakdown Voltage | 250 V | 250 V | 250 V | - | 250 V | - | 250 V | 250 V | - |
| Id - Continuous Drain Current | 215 mA | 150 mA | 215 mA | - | 215 mA | - | 215 mA | 215 mA | - |
| Rds On - Drain-Source Resistance | 8 Ohms | 7 Ohms | 8 Ohms | - | 8 Ohms | - | 7 Ohms | 8 Ohms | - |
| Vgs - Gate-Source Voltage | 20 V | 20 V | - | - | 20 V | - | 20 V | 20 V | - |
| 最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C | - | - | - 55 C | - | - 55 C | - 55 C | - |
| 最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C | - | - | + 150 C | - | + 150 C | + 150 C | - |
| Configuration | Single | Single | Single | - | Single | - | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement | - | Enhancement | - | Enhancement | Enhancement | - |
| 高度 Height |
5.33 mm | 0.95 mm | - | - | 5.33 mm | - | 5.33 mm | 5.33 mm | - |
| 长度 Length |
5.21 mm | 2.9 mm | - | - | 5.21 mm | - | 5.21 mm | 5.21 mm | - |
| 产品 Product |
MOSFET Small Signal | MOSFET Small Signal | - | - | MOSFET Small Signal | - | MOSFET Small Signal | MOSFET Small Signal | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel | - | 1 N-Channel | - | 1 N-Channel | 1 N-Channel | - |
| 宽度 Width |
4.19 mm | 1.3 mm | - | - | 4.19 mm | - | 4.19 mm | 4.19 mm | - |
| Fall Time | 25 ns | 15 ns | - | - | 25 ns | - | 15 ns | 25 ns | - |
| Pd-功率耗散 Pd - Power Dissipation |
740 mW | 360 mW | - | - | 740 mW | - | 740 mW | 740 mW | - |
| Rise Time | 15 ns | 15 ns | - | - | 15 ns | - | 15 ns | 15 ns | - |
| 工厂包装数量 Factory Pack Quantity |
2000 | 3000 | 2000 | - | 2000 | - | 1000 | 2000 | - |
| Typical Turn-Off Delay Time | 25 ns | 25 ns | - | - | 25 ns | - | 25 ns | 25 ns | - |
| Typical Turn-On Delay Time | 20 ns | 20 ns | - | - | 20 ns | - | 20 ns | 20 ns | - |
| 单位重量 Unit Weight |
0.016000 oz | 0.000282 oz | 0.016000 oz | - | 0.016000 oz | - | 0.016000 oz | 0.016000 oz | - |
