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UF1001

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:半导体    分立半导体   

厂商名称:YEA SHIN TECHNOLOGY CO.,LTD

厂商官网:http://www.yeashin.com/

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DATA SHEET
SEMICONDUCTOR
ULTRAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes
FEATURES
‧Plastic
package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing
Flame Retardant Epoxy Molding Compound
‧Exceeds
environmental standards of MIL-S-19500/228
‧Low
power loss, high efficiency
‧Low
forward voltage, high current capability
‧High
surge capacity
‧Ultra
Fast recovery times, high voltage
High temperature soldering : 260 C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
PIN1
.177(4.5)
.MAX
.50(12.7)
MAX
.038(0.96)
.019(.5)
2
3
.114(2.9)
.098(2.5)
O
UF1000~UF1008
TO-220AC Unit:inch(mm)
.196(5.0)
.163(4.16)
.419(10.66)
MAX
DIA
.139(3.55)
.
MIN
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.548(13.93)
MECHANCALDATA
‧Case:
TO-220AC molded plastic
‧Terminals:
Lead solderable per MIL-STD-202, Method 208
‧Polarity:
As marked
‧Mounting
Position: Any
‧Weight:
0.08 ounce, 2.24 gram
.100(2.54)
.025(0.65)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C J ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) lead length @ T
C
=100
°C
Peak Forward Surge Current, 8.3ms single half sine
wave superimposed on rated load(JECEC method)
Maximum Instantaneous Forward Voltage at 10.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
A
=25
°C
@T
A
=125
°C
UF1000
50
35
50
UF1001
100
70
100
UF1002
200
140
200
UF1003
300
210
300
10
UF1004
400
280
400
UF1006
600
420
600
UF1008
800
560
800
UNITS
V
V
V
A
150
VF
I
R
50
80
15
-55 to +150
1.0
10.0
500
75
50
1.3
1.7
A
V
μA
μA
ns
pF
°C/W
°C
Maximum Reverse Recovery Time(Note 1)
Typical Junctioncap acitance (Note 2)
Typical Junction Resi stance (Note 2) RөJA
Operating and Storage Temperature Range T
J
,T
STG
TSTG
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
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1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF1000~UF1008
RATING AND CHARACTERISTIC CURVES
UF1000 THRU UF1008
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
PEAK FORWARD CURRENT,
AMPERES
20
12
8
4
0
0
50
100
150
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
16
1000
T
J
= 125
°C
100
10
CASE TEMPERATURE,
°C
Fig. 1-TYPICAL FORWARD CURRENT DERATING
CURVE
PEAK FORWARD CURRENT
AMPERES
150
120
90
60
30
TJ = 125
°C
8.3ms SINGLE HALF SINCE-
WAVE JEDEC METHOD
T
J
= 25
°C
1.0
0.1
20
40
60
80 100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig. 2-TYPICAL REVERSE CHARACTERISTICS
80
40
1
2
5
10
20
50
100
20
UF1000
10
3 .0
UF1008
NUMBER OF CYCLES AT 60Hz
Fig. 3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
210
INSTANTANEOUS FORWARD CURRENT, (A)
1 .0
0 .3
CAPACITANCE, (pF)
200
160
120
80
40
0
1
2
5
20
50
100
200
500
UF1008
UF1000
0 .1
0.0 3
0.0 1
0.4
0.6
0.8
1.0
1.2
1.4
1.8
REVERSE VOLTAGE, VOLTS
FORWARD VOLTAGE, VOLTS
Fig. 4-TYPICAL JUNCTION CAPACITANCE
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2
Fig. 5-TYPICAL FORWARD CHARACTERISTICS
REV.02 20110725
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参数对比
与UF1001相近的元器件有:UF1004、UF1008、UF1000、UF1002、UF1003、UF1006。描述及对比如下:
型号 UF1001 UF1004 UF1008 UF1000 UF1002 UF1003 UF1006
描述 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 10 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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