首页 > 器件类别 > 半导体 > 分立半导体

UF1003

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:YEA SHIN TECHNOLOGY CO.,LTD

厂商官网:http://www.yeashin.com/

下载文档
文档预览
DATA SHEET
SEMICONDUCTOR
ULTRAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes
FEATURES
‧Plastic
package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing
Flame Retardant Epoxy Molding Compound
‧Exceeds
environmental standards of MIL-S-19500/228
‧Low
power loss, high efficiency
‧Low
forward voltage, high current capability
‧High
surge capacity
‧Ultra
Fast recovery times, high voltage
High temperature soldering : 260 C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
PIN1
.177(4.5)
.MAX
.50(12.7)
MAX
.038(0.96)
.019(.5)
2
3
.114(2.9)
.098(2.5)
O
UF1000~UF1008
TO-220AC Unit:inch(mm)
.196(5.0)
.163(4.16)
.419(10.66)
MAX
DIA
.139(3.55)
.
MIN
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.548(13.93)
MECHANCALDATA
‧Case:
TO-220AC molded plastic
‧Terminals:
Lead solderable per MIL-STD-202, Method 208
‧Polarity:
As marked
‧Mounting
Position: Any
‧Weight:
0.08 ounce, 2.24 gram
.100(2.54)
.025(0.65)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C J ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) lead length @ T
C
=100
°C
Peak Forward Surge Current, 8.3ms single half sine
wave superimposed on rated load(JECEC method)
Maximum Instantaneous Forward Voltage at 10.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
A
=25
°C
@T
A
=125
°C
UF1000
50
35
50
UF1001
100
70
100
UF1002
200
140
200
UF1003
300
210
300
10
UF1004
400
280
400
UF1006
600
420
600
UF1008
800
560
800
UNITS
V
V
V
A
150
VF
I
R
50
80
15
-55 to +150
1.0
10.0
500
75
50
1.3
1.7
A
V
μA
μA
ns
pF
°C/W
°C
Maximum Reverse Recovery Time(Note 1)
Typical Junctioncap acitance (Note 2)
Typical Junction Resi stance (Note 2) RөJA
Operating and Storage Temperature Range T
J
,T
STG
TSTG
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
http://www.yeashin.com
1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF1000~UF1008
RATING AND CHARACTERISTIC CURVES
UF1000 THRU UF1008
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
PEAK FORWARD CURRENT,
AMPERES
20
12
8
4
0
0
50
100
150
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
16
1000
T
J
= 125
°C
100
10
CASE TEMPERATURE,
°C
Fig. 1-TYPICAL FORWARD CURRENT DERATING
CURVE
PEAK FORWARD CURRENT
AMPERES
150
120
90
60
30
TJ = 125
°C
8.3ms SINGLE HALF SINCE-
WAVE JEDEC METHOD
T
J
= 25
°C
1.0
0.1
20
40
60
80 100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig. 2-TYPICAL REVERSE CHARACTERISTICS
80
40
1
2
5
10
20
50
100
20
UF1000
10
3 .0
UF1008
NUMBER OF CYCLES AT 60Hz
Fig. 3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
210
INSTANTANEOUS FORWARD CURRENT, (A)
1 .0
0 .3
CAPACITANCE, (pF)
200
160
120
80
40
0
1
2
5
20
50
100
200
500
UF1008
UF1000
0 .1
0.0 3
0.0 1
0.4
0.6
0.8
1.0
1.2
1.4
1.8
REVERSE VOLTAGE, VOLTS
FORWARD VOLTAGE, VOLTS
Fig. 4-TYPICAL JUNCTION CAPACITANCE
http://www.yeashin.com
2
Fig. 5-TYPICAL FORWARD CHARACTERISTICS
REV.02 20110725
查看更多>
参数对比
与UF1003相近的元器件有:UF1004、UF1008、UF1000、UF1001、UF1002、UF1006。描述及对比如下:
型号 UF1003 UF1004 UF1008 UF1000 UF1001 UF1002 UF1006
描述 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 10 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消