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UPA895TS-T3FB-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6

器件类别：分立半导体    晶体管   

厂商名称：NEC(日电)

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
SUPER LEADLESS MINIMOLD PACKAGE-6
Reach Compliance Code
compliant
最大集电极电流 (IC)
0.1 A
基于收集器的最大容量
0.8 pF
集电极-发射极最大电压
5.5 V
配置
SEPARATE, 2 ELEMENTS
最高频带
L BAND
JESD-30 代码
R-PDSO-F6
JESD-609代码
e6
湿度敏感等级
1
元件数量
2
端子数量
6
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN BISMUTH
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
10
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
6500 MHz
Base Number Matches
1
文档预览
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA895TS
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD
FEATURES
• Built-in low voltage operation, low phase distortion transistor suited for OSC applications
f
T
= 4.5 GHz TYP.,
S
21e
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• Built-in 2 transistors (2
×
2SC5800)
• 6-pin super lead-less minimold package
BUILT-IN TRANSISTORS
Q1, Q2
Flat-lead 3-pin thin-type ultra super minimold part No.
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
µ
PA895TS
µ
PA895TS-T3
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10335EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2002, 2003
µ
PA895TS
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
5.5
1.5
100
110 in 1 element
130 in 2 elements
Unit
V
V
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
MIN.
−
−
100
3.0
5.0
3.0
4.5
−
−
TYP.
−
−
120
4.5
6.5
4.0
5.5
1.9
0.6
MAX.
600
600
145
−
−
−
−
2.5
0.8
Unit
nA
nA
−
GHz
GHz
dB
dB
dB
pF
f
T
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
kP
100 to 145
2
Data Sheet PU10335EJ02V0DS
µ
PA895TS
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
200
150
130
110
2 Elements in total
0.6
100
1 Element
0.4
50
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
100
10
1
0.1
0.01
0.001
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
50
40
30
20
10
400
µ
A
360
µ
A
320
µ
A
280
µ
A
240
µ
A
200
µ
A
160
µ
A
120
µ
A
80
µ
A
I
B
= 40
µ
A
5
6
7
Collector Current I
C
(mA)
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10335EJ02V0DS
3
µ
PA895TS
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
DC Current Gain h
FE
100
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10335EJ02V0DS
µ
PA895TS
PACKAGE DIMENSIONS
6-PIN SUPER LEAD-LESS MINIMOLD (UNIT: mm)
0.9±0.05
0.7±0.05
(Top View)
6
C1
Q1
B1
1
0.35
1
6
0.125±0.05
kP
1.0±0.05
0.7
2
5
E1
0.35
2
5
E2
3
4
C2
3
Q2
4
B2
0.4 MAX.
0.11
+0.1
–0.05
PIN CONNECTIONS
1.
2.
3.
4.
5.
6.
Collector (Q1)
Emitter (Q1)
Collector (Q2)
Base (Q2)
Emitter (Q2)
Base (Q1)
Data Sheet PU10335EJ02V0DS
5
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参数对比
与UPA895TS-T3FB-A相近的元器件有：UPA895TS-T3FB、UPA895TS、UPA895TS-T3、UPA895TS-FB-A、UPA895TS-FB。描述及对比如下：
型号 UPA895TS-T3FB-A UPA895TS-T3FB UPA895TS UPA895TS-T3 UPA895TS-FB-A UPA895TS-FB
描述 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6
包装说明 SUPER LEADLESS MINIMOLD PACKAGE-6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SUPER LEADLESS MINIMOLD PACKAGE-6 SMALL OUTLINE, R-PDSO-F6 SUPER LEADLESS MINIMOLD PACKAGE-6
Reach Compliance Code compliant compliant compliant unknown compliant compliant
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
基于收集器的最大容量 0.8 pF 0.8 pF 0.8 pF 0.8 pF 0.8 pF 0.8 pF
集电极-发射极最大电压 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最高频带 L BAND L BAND L BAND L BAND L BAND L BAND
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 2 2 2 2 2 2
端子数量 6 6 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 6500 MHz 6500 MHz 6500 MHz 6500 MHz 6500 MHz 6500 MHz
是否Rohs认证 符合 不符合 不符合 - 符合 不符合
JESD-609代码 e6 e0 e0 - e6 e0
峰值回流温度（摄氏度） 260 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
端子面层 TIN BISMUTH TIN LEAD TIN LEAD - TIN BISMUTH TIN LEAD
处于峰值回流温度下的最长时间 10 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER - - AMPLIFIER AMPLIFIER
Base Number Matches 1 1 1 1 - -
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器件捷径:
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