UNISONIC TECHNOLOGIES CO., LTD
UTT15P06
15A, 60V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT15P06
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed, cost-effectiveness and minimum on-state resistance. It can
also withstand high energy in the avalanche.
FEATURES
* R
DS(ON)
< 90mΩ @ V
GS
= -10V, I
D
= -15A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT15P06L-TA3-T
UTT15P06G-TA3-T
UTT15P06L-TF3-T
UTT15P06G-TF3-T
UTT15P06L-TM3-T
UTT15P06G-TM3-T
UTT15P06L-TN3-R
UTT15P06G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-733.D
UTT15P06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
I
DM
RATINGS
UNIT
Drain-Source Voltage
-60
V
Gate-Source Voltage
±25
V
Continuous
-15
A
Drain Current
Pulsed
-45
A
TO-220
40
Power Dissipation
TO-220F
P
D
37
W
TO-251/TO-252
31.3
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-220/TO-220F
TO-251/TO-252
TO-220
TO-220F
TO-251/TO-252
θ
JA
θ
JC
RATINGS
62
110
3.125
3.3
4
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (Steady state)
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
MIN
-60
-1
+100
-100
-1
-3
90
1100 2660
115
90
16
30
50
20
14
3
8
TYP
MAX UNIT
V
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=-250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=-60V, V
GS
=0V
Forward
V
GS
=+25V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-25V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= -10V, I
D
= -15A (Note 1)
DYNAMIC PARAMETERS
(Note 2)
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-25V, f=1.0MHz
Output Capacitance
C
OSS
(Note 2)
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=-30V, I
D
=-1A, R
G
=12.5Ω
(Note 3)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=-10V, V
DS
=-30V,
Gate to Source Charge
Q
GS
I
D
=-15A (Note 3)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(T
C
=25°C) (Note 2)
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
F
=-15A, V
GS
=0V (Note 1)
Notes: 1. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
27
-1.0
-15
-45
-1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-733.D
UTT15P06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-733.D
