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VP0106N3-P002

MOSFET 60V 8Ohm

器件类别:半导体    分立半导体   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件:VP0106N3-P002

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Microchip(微芯科技)
产品种类
Product Category
MOSFET
RoHS
N
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 60 V
Id - Continuous Drain Current
- 250 mA
Rds On - Drain-Source Resistance
8 Ohms
Vgs - Gate-Source Voltage
20 V
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
Configuration
Single
Pd-功率耗散
Pd - Power Dissipation
1 W
Channel Mode
Enhancement
Transistor Type
1 P-Channel
类型
Type
FET
工厂包装数量
Factory Pack Quantity
2000
Typical Turn-Off Delay Time
8 ns
Typical Turn-On Delay Time
4 ns
单位重量
Unit Weight
0.007760 oz
参数对比
与VP0106N3-P002相近的元器件有:VP0106N3-G、VP0106N3-G-P005、VP0106N3-G-P003、VP0106N3-G-P014、VP0106N3-P014、VP0106N3-P003、VP0106N3-G P002。描述及对比如下:
型号 VP0106N3-P002 VP0106N3-G VP0106N3-G-P005 VP0106N3-G-P003 VP0106N3-G-P014 VP0106N3-P014 VP0106N3-P003 VP0106N3-G P002
描述 MOSFET 60V 8Ohm MOSFET 60V 8Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 60V 8Ohm MOSFET 60V 8Ohm MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute Attribute Value - Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value -
制造商
Manufacturer
Microchip(微芯科技) - Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) -
产品种类
Product Category
MOSFET - MOSFET MOSFET MOSFET MOSFET MOSFET -
RoHS N - Details Details Details N N -
技术
Technology
Si - Si Si Si Si Si -
安装风格
Mounting Style
Through Hole - Through Hole Through Hole Through Hole Through Hole Through Hole -
封装 / 箱体
Package / Case
TO-92-3 - TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 -
Number of Channels 1 Channel - 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel -
Transistor Polarity P-Channel - P-Channel P-Channel P-Channel P-Channel P-Channel -
Vds - Drain-Source Breakdown Voltage - 60 V - - 60 V - 60 V - 60 V - 60 V - 60 V -
Id - Continuous Drain Current - 250 mA - - 250 mA - 250 mA - 250 mA - 250 mA - 250 mA -
Rds On - Drain-Source Resistance 8 Ohms - 15 Ohms 15 Ohms 15 Ohms 8 Ohms 8 Ohms -
Vgs - Gate-Source Voltage 20 V - - 20 V 20 V 20 V 20 V -
最小工作温度
Minimum Operating Temperature
- 55 C - - - 55 C - 55 C - 55 C - 55 C -
最大工作温度
Maximum Operating Temperature
+ 150 C - - + 150 C + 150 C + 150 C + 150 C -
Configuration Single - Single Single Single Single Single -
Pd-功率耗散
Pd - Power Dissipation
1 W - - 1 W 1 W 1 W 1 W -
Channel Mode Enhancement - Enhancement Enhancement Enhancement Enhancement Enhancement -
Transistor Type 1 P-Channel - 1 P-Channel 1 P-Channel 1 P-Channel 1 P-Channel 1 P-Channel -
工厂包装数量
Factory Pack Quantity
2000 - 2000 2000 2000 2000 2000 -
Typical Turn-Off Delay Time 8 ns - - 8 ns 8 ns 8 ns 8 ns -
Typical Turn-On Delay Time 4 ns - - 4 ns 4 ns 4 ns 4 ns -
单位重量
Unit Weight
0.007760 oz - 0.016000 oz 0.016000 oz 0.016000 oz 0.007760 oz 0.007760 oz -
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