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W29GL032CL7T

32M X 1 FLASH 3V PROM, 70 ns, PDSO48
32M × 1 FLASH 3V 可编程只读存储器, 70 ns, PDSO48

器件类别:存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

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器件参数
参数名称
属性值
功能数量
1
端子数量
48
最大工作温度
85 Cel
最小工作温度
-40 Cel
最大供电/工作电压
3.6 V
最小供电/工作电压
2.7 V
额定供电电压
3 V
最大存取时间
70 ns
加工封装描述
12 X 20 MM, GREEN, TSOP-48
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE, THIN PROFILE
表面贴装
Yes
端子形式
GULL WING
端子间距
0.5000 mm
端子涂层
MATTE TIN
端子位置
DUAL
包装材料
PLASTIC/EPOXY
温度等级
INDUSTRIAL
内存宽度
1
组织
32M X 1
存储密度
3.36E7 deg
操作模式
ASYNCHRONOUS
位数
3.36E7 words
位数
32M
内存IC类型
FLASH 3V PROM
串行并行
PARALLEL
文档预览
W29GL032C
32M-BIT
3.0-VOLT PARALLEL FLASH MEMORY WITH
PAGE MODE
Publication Release Date: August 2, 2013
Revision H
BLANK
W29GL032C
Table of Contents
1
2
3
4
5
6
GENERAL DESCRIPTION ......................................................................................................... 1
FEATURES ................................................................................................................................. 1
PIN CONFIGURATIONS ............................................................................................................. 2
BLOCK DIAGRAM ...................................................................................................................... 3
PIN DESCRIPTION ..................................................................................................................... 3
ARRAY ARCHITECTURE ........................................................................................................... 4
6.1
H/L Sector Address Table ............................................................................................... 4
6.2
Top Sector Address Table .............................................................................................. 4
6.3
Bottom Sector Address Table ......................................................................................... 4
FUNCTIONAL DESCRIPTION.................................................................................................... 5
7.1
Device Bus Operation ..................................................................................................... 5
7.2
Instruction Definitions...................................................................................................... 6
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
7.2.10
7.2.11
7.2.12
7.2.13
7.2.14
7.2.15
7.2.16
7.2.17
7.2.18
7.2.19
7.2.20
7.2.21
7.2.22
7.2.23
Reading Array Data .......................................................................................................... 6
Page Mode Read .............................................................................................................. 6
Device Reset Operation .................................................................................................... 7
Standby Mode ................................................................................................................... 7
Output Disable Mode ........................................................................................................ 7
Write Operation ................................................................................................................. 7
Byte/Word Selection ......................................................................................................... 8
Automatic Programming of the Memory Array .................................................................. 8
Erasing the Memory Array ................................................................................................ 9
Erase Suspend/Resume ............................................................................................... 10
Sector Erase Resume ................................................................................................... 10
Program Suspend/Resume ........................................................................................... 11
Program Resume .......................................................................................................... 11
Programming Operation ................................................................................................ 11
Buffer Write Abort ......................................................................................................... 12
Accelerated Programming Operation ............................................................................ 12
Automatic Select Bus Operation ................................................................................... 12
Automatic Select Operations......................................................................................... 13
Automatic Select Instruction Sequence ........................................................................ 13
Enhanced Variable IO (EVIO) Control .......................................................................... 14
Hardware Data Protection Options ............................................................................... 14
Inherent Data Protection ............................................................................................... 14
Power Supply Decoupling ............................................................................................. 14
Lock Register .................................................................................................................. 16
Individual (Non-Volatile) Protection Mode ....................................................................... 17
Factory Locked: Security Sector Programmed and Protected at factory ......................... 20
Customer Lockable: Security Sector Not Programmed or Protected .............................. 20
7
7.3
Enhanced Sector Protect/Un-protect ............................................................................ 15
7.3.1
7.3.2
7.4
Security Sector Flash Memory Region ......................................................................... 20
7.4.1
7.4.2
7.5
Instruction Definition Tables ......................................................................................... 21
Publication Release Date: August 2, 2013
Revision H
i
W29GL032C
7.6
8
Common Flash Memory Interface (CFI) Mode ............................................................. 25
7.6.1
Query Instruction and Common Flash memory Interface (CFI) Mode ............................. 25
ELECTRICAL CHARACTERISTICS ......................................................................................... 29
8.1
Absolute Maximum Stress Ratings ............................................................................... 29
8.2
Operating Temperature and Voltage ............................................................................ 29
8.3
DC Characteristics ........................................................................................................ 30
8.4
Switching Test Circuits.................................................................................................. 31
8.4.1
Switching Test Waveform ............................................................................................... 31
Instruction Write Operation ............................................................................................. 33
Read / Reset Operation .................................................................................................. 34
Erase/Program Operation ............................................................................................... 36
Write Operation Status .................................................................................................... 46
WORD/BYTE CONFIGURATION (#BYTE)..................................................................... 50
DEEP POWER DOWN MODE ........................................................................................ 52
WRITE BUFFER PROGRAM.......................................................................................... 52
At Device Power-up ........................................................................................................ 53
8.5
AC Characteristics ........................................................................................................ 32
8.5.1
8.5.2
8.5.3
8.5.4
8.5.5
8.5.6
8.5.7
8.6
Recommended Operating Conditions ........................................................................... 53
8.6.1
9
10
11
8.7
Erase and Programming Performance ......................................................................... 54
8.8
Data Retention .............................................................................................................. 54
8.9
Latch-up Characteristics ............................................................................................... 54
8.10 Pin Capacitance ............................................................................................................ 54
PACKAGE DIMENSIONS ......................................................................................................... 55
9.1
TSOP 48-pin 12x20mm ................................................................................................ 55
9.2
TSOP 56-pin 14x20mm ................................................................................................ 56
9.3
Low-Profile Fine-Pitch Ball Grid Array, 64-ball 11x13mm (LFBGA64) ......................... 57
9.4
Thin & Fine-Pitch Ball Grid Array, 6x8 mm
2
, pitch: 0.8 mm,
=0.4mm
(TFBGA48) .... 58
ORDERING INFORMATION ..................................................................................................... 59
10.1 Ordering Part Number Definitions ................................................................................. 59
10.2 Valid Part Numbers and Top Side Marking .................................................................. 60
HISTORY .................................................................................................................................. 61
ii
W29GL032C
List of Figures
Figure 3-1
Figure 3-2
Figure 3-3
Figure 3-4
Figure 4-1
Figure 7-1
Figure 7-2
Figure 7-3
Figure 8-1
Figure 8-2
Figure 8-3
Figure 8-4
Figure 8-5
Figure 8-6
Figure 8-7
Figure 8-8
Figure 8-9
Figure 8-10
Figure 8-11
Figure 8-12
Figure 8-13
Figure 8-14
Figure 8-15
Figure 8-16
Figure 8-17
Figure 8-18
Figure 8-19
Figure 8-20
Figure 8-21
Figure 8-22
Figure 8-23
Figure 8-24
Figure 8-25
Figure 8-26
Figure 8-27
Figure 8-28
Figure 9-1
Figure 9-2
Figure 9-3
Figure 9-4
Figure 10-1
LFBGA64 TOP VIEW (FACE DOWN) ........................................................................... 2
56-PIN STANDARD TSOP (TOP VIEW) ........................................................................ 2
TFBGA48 TOP VIEW (FACE DOWN) ............................................................................ 2
48-PIN STANDARD TSOP (TOP VIEW) ........................................................................ 2
Block Diagram ................................................................................................................. 3
Enhanced Sector Protect/Un-protect IPB Program Algorithm ...................................... 15
Lock Register Program Algorithm ................................................................................. 16
IPB Program Algorithm ................................................................................................. 18
Maximum Negative Overshoot ..................................................................................... 29
Maximum Positive Overshoot ....................................................................................... 29
Switch Test Circuit ........................................................................................................ 31
Switching Test Waveform ............................................................................................. 31
Instruction Write Operation Waveform .......................................................................... 33
Read Timing Waveform ................................................................................................ 34
#RESET Timing Waveform ........................................................................................... 35
Automatic Chip Erase Timing Waveform ...................................................................... 36
Automatic Chip Erase Algorithm Flowchart .................................................................. 37
Automatic Sector Erase Timing Waveform ................................................................... 38
Automatic Sector Erase Algorithm Flowchart ............................................................... 39
Erase Suspend/Resume Flowchart .............................................................................. 40
Automatic Program Timing Waveform .......................................................................... 41
Accelerated Program Timing Waveform ....................................................................... 41
#CE Controlled Write Timing Waveform ....................................................................... 42
#WE Controlled Write Timing Waveform ...................................................................... 43
Automatic Programming Algorithm Flowchart .............................................................. 44
Silicon ID Read Timing Waveform ................................................................................ 45
Data# Polling Timing Waveform (During Automatic Algorithms) .................................. 46
Status Polling for Word Programming/Erase ................................................................ 47
Status Polling for Write Buffer Program Flowchart ....................................................... 48
Toggling Bit Timing Waveform (During Automatic Algorithms) .................................... 49
Toggle Bit Algorithm...................................................................................................... 50
#BYTE Timing Waveform For Read operations ........................................................... 51
Page Read Timing Waveform ....................................................................................... 51
Deep Power Down mode Waveform ............................................................................ 52
Write Buffer Program Flowchart ................................................................................... 52
AC Timing at Device Power-Up .................................................................................... 53
TSOP 48-pin 12x20mm ................................................................................................ 55
TSOP 56-pin 14x20mm ................................................................................................ 56
LFBGA 64-ball 11x13mm ............................................................................................. 57
TFBGA 48-Ball 6x8mm ................................................................................................. 58
Ordering Part Numbering .............................................................................................. 59
iii
Publication Release Date: August 2, 2013
Revision H
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参数对比
与W29GL032CL7T相近的元器件有:W29GL032C、W29GL032CB7A、W29GL032CB7B、W29GL032CH7B、W29GL032CH7T、W29GL032CL7B、W29GL032CT7A、W29GL032CT7B、W29GL032CT7S。描述及对比如下:
型号 W29GL032CL7T W29GL032C W29GL032CB7A W29GL032CB7B W29GL032CH7B W29GL032CH7T W29GL032CL7B W29GL032CT7A W29GL032CT7B W29GL032CT7S
描述 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 Flash, 32MX1, 70ns, PBGA64, LFBGA-64 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 Flash, 32MX1, 70ns, PDSO56, TSOP-56 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 Flash, 32MX1, 70ns, PBGA48, TFBGA-48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 48 48 48 64 64 56 64 48 48 48
表面贴装 Yes Yes Yes YES YES YES YES YES Yes YES
端子形式 GULL WING GULL WING GULL WING BALL BALL GULL WING BALL BALL GULL WING GULL WING
端子位置 DUAL DUAL DUAL BOTTOM BOTTOM DUAL BOTTOM BOTTOM DUAL DUAL
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
内存宽度 1 1 1 1 1 1 1 1 1 1
组织 32M X 1 32M X 1 32M X 1 32MX1 32MX1 32MX1 32MX1 32MX1 32M X 1 32MX1
是否无铅 - - - 不含铅 不含铅 不含铅 不含铅 不含铅 - 不含铅
是否Rohs认证 - - - 符合 符合 符合 符合 符合 - 符合
零件包装代码 - - - BGA BGA TSOP BGA BGA - TSOP
包装说明 - - - LFBGA-64 LFBGA-64 TSOP-56 LFBGA-64 TFBGA-48 - TSOP-48
针数 - - - 64 64 56 64 48 - 48
Reach Compliance Code - - - compliant compli compliant compliant compliant - compli
ECCN代码 - - - EAR99 3A991.B.1.A EAR99 3A991.B.1.A EAR99 - 3A991.B.1.A
最长访问时间 - - - 70 ns 70 ns 70 ns 70 ns 70 ns - 70 ns
备用内存宽度 - - - 8 8 8 8 8 - 8
命令用户界面 - - - YES YES YES YES YES - YES
通用闪存接口 - - - YES YES YES YES YES - YES
数据轮询 - - - YES YES YES YES YES - YES
JESD-30 代码 - - - R-PBGA-B64 R-PBGA-B64 R-PDSO-G56 R-PBGA-B64 R-PBGA-B48 - R-PDSO-G48
JESD-609代码 - - - e1 e1 e3 e1 e1 - e3
长度 - - - 13 mm 13 mm 18.4 mm 13 mm 8 mm - 18.4 mm
内存密度 - - - 33554432 bit 33554432 bi 33554432 bit 33554432 bit 33554432 bit - 33554432 bi
内存集成电路类型 - - - FLASH FLASH FLASH FLASH FLASH - FLASH
部门数/规模 - - - 8,63 64 64 64 8,63 - 8,63
字数 - - - 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words - 33554432 words
字数代码 - - - 32000000 32000000 32000000 32000000 32000000 - 32000000
工作模式 - - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
最高工作温度 - - - 85 °C 85 °C 85 °C 85 °C 85 °C - 85 °C
最低工作温度 - - - -40 °C -40 °C -40 °C -40 °C -40 °C - -40 °C
封装主体材料 - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 - - - LBGA LBGA TSOP1 LBGA TFBGA - TSOP1
封装等效代码 - - - BGA64,8X8,40 BGA64,8X8,40 TSSOP56,.8,20 BGA64,8X8,40 BGA48,6X8,32 - TSSOP48,.8,20
封装形状 - - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 - - - GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH - SMALL OUTLINE, THIN PROFILE
页面大小 - - - 8/16 words 8/16 words 8/16 words 8/16 words 8/16 words - 8/16 words
并行/串行 - - - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL
编程电压 - - - 3 V 3 V 3 V 3 V 3 V - 3 V
认证状态 - - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
就绪/忙碌 - - - YES YES YES YES YES - YES
座面最大高度 - - - 1.4 mm 1.4 mm 1.2 mm 1.4 mm 1.2 mm - 1.2 mm
部门规模 - - - 8K,64K 64K 64K 64K 8K,64K - 8K,64K
最大待机电流 - - - 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A - 0.000005 A
最大压摆率 - - - 0.055 mA 0.055 mA 0.055 mA 0.055 mA 0.055 mA - 0.055 mA
最大供电电压 (Vsup) - - - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V
最小供电电压 (Vsup) - - - 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V - 2.7 V
标称供电电压 (Vsup) - - - 3 V 3 V 3 V 3 V 3 V - 3 V
技术 - - - CMOS CMOS CMOS CMOS CMOS - CMOS
端子面层 - - - TIN SILVER COPPER TIN SILVER COPPER MATTE TIN TIN SILVER COPPER TIN SILVER COPPER - Matte Tin (Sn)
端子节距 - - - 1 mm 1 mm 0.5 mm 1 mm 0.8 mm - 0.5 mm
切换位 - - - YES YES YES YES YES - YES
类型 - - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE - NOR TYPE
宽度 - - - 11 mm 11 mm 14 mm 11 mm 6 mm - 12 mm
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