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W29GL032CT7S

32M X 1 FLASH 3V PROM, 70 ns, PDSO48
32M × 1 FLASH 3V 可编程只读存储器, 70 ns, PDSO48

器件类别:存储    存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TSOP
包装说明
TSOP-48
针数
48
Reach Compliance Code
compli
ECCN代码
3A991.B.1.A
最长访问时间
70 ns
其他特性
TOP BOOT BLOCK
备用内存宽度
8
启动块
TOP
命令用户界面
YES
通用闪存接口
YES
数据轮询
YES
JESD-30 代码
R-PDSO-G48
JESD-609代码
e3
长度
18.4 mm
内存密度
33554432 bi
内存集成电路类型
FLASH
内存宽度
1
功能数量
1
部门数/规模
8,63
端子数量
48
字数
33554432 words
字数代码
32000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
32MX1
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP1
封装等效代码
TSSOP48,.8,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
页面大小
8/16 words
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3/3.3 V
编程电压
3 V
认证状态
Not Qualified
就绪/忙碌
YES
座面最大高度
1.2 mm
部门规模
8K,64K
最大待机电流
0.000005 A
最大压摆率
0.055 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
切换位
YES
类型
NOR TYPE
宽度
12 mm
Base Number Matches
1
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W29GL032C
32M-BIT
3.0-VOLT PARALLEL FLASH MEMORY WITH
PAGE MODE
Publication Release Date: August 2, 2013
Revision H
BLANK
W29GL032C
Table of Contents
1
2
3
4
5
6
GENERAL DESCRIPTION ......................................................................................................... 1
FEATURES ................................................................................................................................. 1
PIN CONFIGURATIONS ............................................................................................................. 2
BLOCK DIAGRAM ...................................................................................................................... 3
PIN DESCRIPTION ..................................................................................................................... 3
ARRAY ARCHITECTURE ........................................................................................................... 4
6.1
H/L Sector Address Table ............................................................................................... 4
6.2
Top Sector Address Table .............................................................................................. 4
6.3
Bottom Sector Address Table ......................................................................................... 4
FUNCTIONAL DESCRIPTION.................................................................................................... 5
7.1
Device Bus Operation ..................................................................................................... 5
7.2
Instruction Definitions...................................................................................................... 6
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
7.2.10
7.2.11
7.2.12
7.2.13
7.2.14
7.2.15
7.2.16
7.2.17
7.2.18
7.2.19
7.2.20
7.2.21
7.2.22
7.2.23
Reading Array Data .......................................................................................................... 6
Page Mode Read .............................................................................................................. 6
Device Reset Operation .................................................................................................... 7
Standby Mode ................................................................................................................... 7
Output Disable Mode ........................................................................................................ 7
Write Operation ................................................................................................................. 7
Byte/Word Selection ......................................................................................................... 8
Automatic Programming of the Memory Array .................................................................. 8
Erasing the Memory Array ................................................................................................ 9
Erase Suspend/Resume ............................................................................................... 10
Sector Erase Resume ................................................................................................... 10
Program Suspend/Resume ........................................................................................... 11
Program Resume .......................................................................................................... 11
Programming Operation ................................................................................................ 11
Buffer Write Abort ......................................................................................................... 12
Accelerated Programming Operation ............................................................................ 12
Automatic Select Bus Operation ................................................................................... 12
Automatic Select Operations......................................................................................... 13
Automatic Select Instruction Sequence ........................................................................ 13
Enhanced Variable IO (EVIO) Control .......................................................................... 14
Hardware Data Protection Options ............................................................................... 14
Inherent Data Protection ............................................................................................... 14
Power Supply Decoupling ............................................................................................. 14
Lock Register .................................................................................................................. 16
Individual (Non-Volatile) Protection Mode ....................................................................... 17
Factory Locked: Security Sector Programmed and Protected at factory ......................... 20
Customer Lockable: Security Sector Not Programmed or Protected .............................. 20
7
7.3
Enhanced Sector Protect/Un-protect ............................................................................ 15
7.3.1
7.3.2
7.4
Security Sector Flash Memory Region ......................................................................... 20
7.4.1
7.4.2
7.5
Instruction Definition Tables ......................................................................................... 21
Publication Release Date: August 2, 2013
Revision H
i
W29GL032C
7.6
8
Common Flash Memory Interface (CFI) Mode ............................................................. 25
7.6.1
Query Instruction and Common Flash memory Interface (CFI) Mode ............................. 25
ELECTRICAL CHARACTERISTICS ......................................................................................... 29
8.1
Absolute Maximum Stress Ratings ............................................................................... 29
8.2
Operating Temperature and Voltage ............................................................................ 29
8.3
DC Characteristics ........................................................................................................ 30
8.4
Switching Test Circuits.................................................................................................. 31
8.4.1
Switching Test Waveform ............................................................................................... 31
Instruction Write Operation ............................................................................................. 33
Read / Reset Operation .................................................................................................. 34
Erase/Program Operation ............................................................................................... 36
Write Operation Status .................................................................................................... 46
WORD/BYTE CONFIGURATION (#BYTE)..................................................................... 50
DEEP POWER DOWN MODE ........................................................................................ 52
WRITE BUFFER PROGRAM.......................................................................................... 52
At Device Power-up ........................................................................................................ 53
8.5
AC Characteristics ........................................................................................................ 32
8.5.1
8.5.2
8.5.3
8.5.4
8.5.5
8.5.6
8.5.7
8.6
Recommended Operating Conditions ........................................................................... 53
8.6.1
9
10
11
8.7
Erase and Programming Performance ......................................................................... 54
8.8
Data Retention .............................................................................................................. 54
8.9
Latch-up Characteristics ............................................................................................... 54
8.10 Pin Capacitance ............................................................................................................ 54
PACKAGE DIMENSIONS ......................................................................................................... 55
9.1
TSOP 48-pin 12x20mm ................................................................................................ 55
9.2
TSOP 56-pin 14x20mm ................................................................................................ 56
9.3
Low-Profile Fine-Pitch Ball Grid Array, 64-ball 11x13mm (LFBGA64) ......................... 57
9.4
Thin & Fine-Pitch Ball Grid Array, 6x8 mm
2
, pitch: 0.8 mm,
=0.4mm
(TFBGA48) .... 58
ORDERING INFORMATION ..................................................................................................... 59
10.1 Ordering Part Number Definitions ................................................................................. 59
10.2 Valid Part Numbers and Top Side Marking .................................................................. 60
HISTORY .................................................................................................................................. 61
ii
W29GL032C
List of Figures
Figure 3-1
Figure 3-2
Figure 3-3
Figure 3-4
Figure 4-1
Figure 7-1
Figure 7-2
Figure 7-3
Figure 8-1
Figure 8-2
Figure 8-3
Figure 8-4
Figure 8-5
Figure 8-6
Figure 8-7
Figure 8-8
Figure 8-9
Figure 8-10
Figure 8-11
Figure 8-12
Figure 8-13
Figure 8-14
Figure 8-15
Figure 8-16
Figure 8-17
Figure 8-18
Figure 8-19
Figure 8-20
Figure 8-21
Figure 8-22
Figure 8-23
Figure 8-24
Figure 8-25
Figure 8-26
Figure 8-27
Figure 8-28
Figure 9-1
Figure 9-2
Figure 9-3
Figure 9-4
Figure 10-1
LFBGA64 TOP VIEW (FACE DOWN) ........................................................................... 2
56-PIN STANDARD TSOP (TOP VIEW) ........................................................................ 2
TFBGA48 TOP VIEW (FACE DOWN) ............................................................................ 2
48-PIN STANDARD TSOP (TOP VIEW) ........................................................................ 2
Block Diagram ................................................................................................................. 3
Enhanced Sector Protect/Un-protect IPB Program Algorithm ...................................... 15
Lock Register Program Algorithm ................................................................................. 16
IPB Program Algorithm ................................................................................................. 18
Maximum Negative Overshoot ..................................................................................... 29
Maximum Positive Overshoot ....................................................................................... 29
Switch Test Circuit ........................................................................................................ 31
Switching Test Waveform ............................................................................................. 31
Instruction Write Operation Waveform .......................................................................... 33
Read Timing Waveform ................................................................................................ 34
#RESET Timing Waveform ........................................................................................... 35
Automatic Chip Erase Timing Waveform ...................................................................... 36
Automatic Chip Erase Algorithm Flowchart .................................................................. 37
Automatic Sector Erase Timing Waveform ................................................................... 38
Automatic Sector Erase Algorithm Flowchart ............................................................... 39
Erase Suspend/Resume Flowchart .............................................................................. 40
Automatic Program Timing Waveform .......................................................................... 41
Accelerated Program Timing Waveform ....................................................................... 41
#CE Controlled Write Timing Waveform ....................................................................... 42
#WE Controlled Write Timing Waveform ...................................................................... 43
Automatic Programming Algorithm Flowchart .............................................................. 44
Silicon ID Read Timing Waveform ................................................................................ 45
Data# Polling Timing Waveform (During Automatic Algorithms) .................................. 46
Status Polling for Word Programming/Erase ................................................................ 47
Status Polling for Write Buffer Program Flowchart ....................................................... 48
Toggling Bit Timing Waveform (During Automatic Algorithms) .................................... 49
Toggle Bit Algorithm...................................................................................................... 50
#BYTE Timing Waveform For Read operations ........................................................... 51
Page Read Timing Waveform ....................................................................................... 51
Deep Power Down mode Waveform ............................................................................ 52
Write Buffer Program Flowchart ................................................................................... 52
AC Timing at Device Power-Up .................................................................................... 53
TSOP 48-pin 12x20mm ................................................................................................ 55
TSOP 56-pin 14x20mm ................................................................................................ 56
LFBGA 64-ball 11x13mm ............................................................................................. 57
TFBGA 48-Ball 6x8mm ................................................................................................. 58
Ordering Part Numbering .............................................................................................. 59
iii
Publication Release Date: August 2, 2013
Revision H
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参数对比
与W29GL032CT7S相近的元器件有:W29GL032C、W29GL032CB7A、W29GL032CB7B、W29GL032CH7B、W29GL032CH7T、W29GL032CL7B、W29GL032CL7T、W29GL032CT7A、W29GL032CT7B。描述及对比如下:
型号 W29GL032CT7S W29GL032C W29GL032CB7A W29GL032CB7B W29GL032CH7B W29GL032CH7T W29GL032CL7B W29GL032CL7T W29GL032CT7A W29GL032CT7B
描述 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 Flash, 32MX1, 70ns, PBGA64, LFBGA-64 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 Flash, 32MX1, 70ns, PDSO56, TSOP-56 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48 Flash, 32MX1, 70ns, PBGA48, TFBGA-48 32M X 1 FLASH 3V PROM, 70 ns, PDSO48
内存宽度 1 1 1 1 1 1 1 1 1 1
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 48 48 48 64 64 56 64 48 48 48
组织 32MX1 32M X 1 32M X 1 32MX1 32MX1 32MX1 32MX1 32M X 1 32MX1 32M X 1
表面贴装 YES Yes Yes YES YES YES YES Yes YES Yes
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING BALL BALL GULL WING BALL GULL WING BALL GULL WING
端子位置 DUAL DUAL DUAL BOTTOM BOTTOM DUAL BOTTOM DUAL BOTTOM DUAL
是否无铅 不含铅 - - 不含铅 不含铅 不含铅 不含铅 - 不含铅 -
是否Rohs认证 符合 - - 符合 符合 符合 符合 - 符合 -
零件包装代码 TSOP - - BGA BGA TSOP BGA - BGA -
包装说明 TSOP-48 - - LFBGA-64 LFBGA-64 TSOP-56 LFBGA-64 - TFBGA-48 -
针数 48 - - 64 64 56 64 - 48 -
Reach Compliance Code compli - - compliant compli compliant compliant - compliant -
ECCN代码 3A991.B.1.A - - EAR99 3A991.B.1.A EAR99 3A991.B.1.A - EAR99 -
最长访问时间 70 ns - - 70 ns 70 ns 70 ns 70 ns - 70 ns -
备用内存宽度 8 - - 8 8 8 8 - 8 -
命令用户界面 YES - - YES YES YES YES - YES -
通用闪存接口 YES - - YES YES YES YES - YES -
数据轮询 YES - - YES YES YES YES - YES -
JESD-30 代码 R-PDSO-G48 - - R-PBGA-B64 R-PBGA-B64 R-PDSO-G56 R-PBGA-B64 - R-PBGA-B48 -
JESD-609代码 e3 - - e1 e1 e3 e1 - e1 -
长度 18.4 mm - - 13 mm 13 mm 18.4 mm 13 mm - 8 mm -
内存密度 33554432 bi - - 33554432 bit 33554432 bi 33554432 bit 33554432 bit - 33554432 bit -
内存集成电路类型 FLASH - - FLASH FLASH FLASH FLASH - FLASH -
部门数/规模 8,63 - - 8,63 64 64 64 - 8,63 -
字数 33554432 words - - 33554432 words 33554432 words 33554432 words 33554432 words - 33554432 words -
字数代码 32000000 - - 32000000 32000000 32000000 32000000 - 32000000 -
工作模式 ASYNCHRONOUS - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS -
最高工作温度 85 °C - - 85 °C 85 °C 85 °C 85 °C - 85 °C -
最低工作温度 -40 °C - - -40 °C -40 °C -40 °C -40 °C - -40 °C -
封装主体材料 PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
封装代码 TSOP1 - - LBGA LBGA TSOP1 LBGA - TFBGA -
封装等效代码 TSSOP48,.8,20 - - BGA64,8X8,40 BGA64,8X8,40 TSSOP56,.8,20 BGA64,8X8,40 - BGA48,6X8,32 -
封装形状 RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR -
封装形式 SMALL OUTLINE, THIN PROFILE - - GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE - GRID ARRAY, THIN PROFILE, FINE PITCH -
页面大小 8/16 words - - 8/16 words 8/16 words 8/16 words 8/16 words - 8/16 words -
并行/串行 PARALLEL - - PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL -
编程电压 3 V - - 3 V 3 V 3 V 3 V - 3 V -
认证状态 Not Qualified - - Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified -
就绪/忙碌 YES - - YES YES YES YES - YES -
座面最大高度 1.2 mm - - 1.4 mm 1.4 mm 1.2 mm 1.4 mm - 1.2 mm -
部门规模 8K,64K - - 8K,64K 64K 64K 64K - 8K,64K -
最大待机电流 0.000005 A - - 0.000005 A 0.000005 A 0.000005 A 0.000005 A - 0.000005 A -
最大压摆率 0.055 mA - - 0.055 mA 0.055 mA 0.055 mA 0.055 mA - 0.055 mA -
最大供电电压 (Vsup) 3.6 V - - 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V -
最小供电电压 (Vsup) 2.7 V - - 2.7 V 2.7 V 2.7 V 2.7 V - 2.7 V -
标称供电电压 (Vsup) 3 V - - 3 V 3 V 3 V 3 V - 3 V -
技术 CMOS - - CMOS CMOS CMOS CMOS - CMOS -
端子面层 Matte Tin (Sn) - - TIN SILVER COPPER TIN SILVER COPPER MATTE TIN TIN SILVER COPPER - TIN SILVER COPPER -
端子节距 0.5 mm - - 1 mm 1 mm 0.5 mm 1 mm - 0.8 mm -
切换位 YES - - YES YES YES YES - YES -
类型 NOR TYPE - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE - NOR TYPE -
宽度 12 mm - - 11 mm 11 mm 14 mm 11 mm - 6 mm -
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