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2N2222AUB

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

器件类别:分立半导体    晶体管   

厂商名称:TT Electronics plc

厂商官网:http://www.ttelectronics.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
TT Electronics plc
包装说明
SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code
compliant
ECCN代码
EAR99
Samacsys Description
Bipolar Transistors - BJT NPN G.P. TRANSISTOR
最大集电极电流 (IC)
0.8 A
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-CDSO-N3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
最大功率耗散 (Abs)
0.5 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
最大关闭时间(toff)
300 ns
最大开启时间(吨)
35 ns
Base Number Matches
1
文档预览
Product Bulletin JANTX, JANTXV, 2N2222AUB
September 1996
Surface Mount NPN General Purpose Transistor
Type JANTX, JANTXV, 2N2222AUB
Feature
Ceramic surface mount package
Miniature package to minimize circuit
board area
Hermetically sealed
Qualification per MIL-S-19500/255
Same footprint and pin-out as many
SOT-23 package transistors
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0
Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Operating Junction Temperature (T
J
). . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Storage Junction Temperature (T
stg
) . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Power Dissipation @ T
A
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W
Power Dissipation @ T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W
(1)
Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215
o
C
Soldering Temperature (heated collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . 260
o
C
Notes:
(1) Derate linearly 6.6 mW/
o
C above 25
o
C.
Description
The JANTX/TXV2N2222AUB is a
miniature hermetically sealed ceramic
surface mount general purpose switching
transistor. The miniature three pin
ceramic package is ideal for upgrading
commercial grade circuits to military
reliability levels where plastic SOT-23
devices have been used. The “
UB”suffix
denotes the 3 terminal chip carrier
package, type “ per MIL-PRF-
B”
19500/255.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
CB
= 30 V, P
D
= 200
mW, T
A
= 25
o
C, t =80 hrs. Refer to MIL-
PRF-19500/255 for complete
requirements. In addition, the TX and
TXV versions are 100% thermal
response tested.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-6
(972) 323-2200
Fax (972) 323-2396
Types JANTX, JANTXV-2N2222AUB
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
PARAMETER
MIN MAX UNITS
75
50
6.0
10
10
V
V
V
nA
µA
nA
nA
-
325
-
-
300
-
-
-
0.30
1.0
V
V
V
V
-
-
8.0
25
35
300
pF
pF
ns
ns
TEST CONDITION
IC = 10
µA,
I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150
o
C
V
EB
= 4 V, I
C
= 0
V
CE
= 50 V
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 150 mA
(2)
V
CE
= 10 V, I
C
= 500 mA
(2)
V
CE
= 10 V, I
C
= 10 mA, T
A
= -55
o
C
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 500 mA, I
B
= 15 mA
(2)
I
C
= 150 mA, I
B
= 15 mA
(2)
I
C
= 500 mA, I
B
= 15 mA
(2)
V
CE
= 10 V, I
C
= 1.0 mA, f = 1.0 kHz
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
V
CB
= 10 V, 100 kHz
f
1.0 MHz
V
EB
= 0.5 V, 100 kHz
f
1.0 MHz
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I
EBO
I
CES
h
FE
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Forward-Current Transfer Ratio
50
75
100
100
30
35
10
50
On Characteristics
V
CE(SAT)
Collector-Emitter Saturation Voltage
V
BE(SAT)
Base-Emitter Saturation Voltage
0.60
1.20
2.0
Small-Signal Characteristics
h
fe
Ih
fe
I
C
obo
C
ibo
t
on
t
off
Small Signal Forward Current Transfer
Ratio
Small Signal Forward Current Transfer
Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open)
Turn-On Time
Turn-Off Time
50
2.5
Switching Characteristics
(2) Pulse Width
300
µs,
Duty Cycle
2.0%
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-7
(972) 323-2200
Fax (972) 323-2396
查看更多>
参数对比
与2N2222AUB相近的元器件有:。描述及对比如下:
型号 2N2222AUB
描述 Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
是否无铅 含铅
是否Rohs认证 不符合
厂商名称 TT Electronics plc
包装说明 SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code compliant
ECCN代码 EAR99
Samacsys Description Bipolar Transistors - BJT NPN G.P. TRANSISTOR
最大集电极电流 (IC) 0.8 A
集电极-发射极最大电压 50 V
配置 SINGLE
最小直流电流增益 (hFE) 100
JESD-30 代码 R-CDSO-N3
JESD-609代码 e0
元件数量 1
端子数量 3
最高工作温度 200 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 NPN
最大功率耗散 (Abs) 0.5 W
认证状态 Not Qualified
表面贴装 YES
端子面层 Tin/Lead (Sn/Pb)
端子形式 NO LEAD
端子位置 DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
标称过渡频率 (fT) 250 MHz
最大关闭时间(toff) 300 ns
最大开启时间(吨) 35 ns
Base Number Matches 1
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