NPN 2N2222 – 2N2222A
PNP 2N2907 – 2N2907A
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector
connected to the case .
They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f./u.h.f.
amplifiers .
PNP complements are 2N2907 and 2N2907A .
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
T
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature range
@ T
amb
= 25°
@ T
case
= 25°
Ratings
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
Value
40(1)
30
75
60
6
5
800
0.5
1.2
200
-65 to +200
Unit
V
V
V
mA
Watts
Watts
°C
°C
(1) Applicable up to I
C
= 500mA
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to ambient in
free air
Thermal Resistance, Junction to case
2N2222A
2N2222
2N2222A
2N2222
Value
350
146
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1/3
NPN 2N2222 – 2N2222A
PNP 2N2907 – 2N2907A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
CBO
I
EBO
I
CEX
V
CEO
V
CBO
V
EBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Test Condition(s)
V
CB
=60 V, I
E
=0V
V
CB
=50 V, I
E
=0V
V
CB
=60 V, I
E
=0V, T
j
=150°C
V
CB
=50 V, I
E
=0V, T
j
=150°C
V
BE
=3.0 V, I
C
=0
V
CE
=60 V, -V
BE
=3V
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.4
1
1.6
1.2
1.3
2
2.6
-
nA
µA
nA
nA
V
V
V
Collector Emitter Breakdown
I
C
=10 mA, I
B
=0
Voltage
Collector Base Breakdown
I
C
=10 µA, I
E
=0
Voltage
Emitter Base Breakdown
I
E
=10 µA, I
C
=0
Voltage
I
C
=0.1 mA, V
CE
=10 V
I
C
=1 mA, V
CE
=10 V
I
C
=10 mA, V
CE
=10 V
h
FE
DC Current Gain
I
C
=10 mA, V
CE
=10 V
T
amb
= -55°
I
C
=150 mA, V
CE
=1 V (1)
I
C
=150 mA, V
CE
=10 V (1)
I
C
=500 mA, V
CE
=10 V (1)
I
C
=150 mA, I
B
=15 mA
I
C
=500 mA, I
B
=50 mA
I
C
=150 mA, I
B
=15 mA
I
C
=500 mA, I
B
=50 mA
V
CE(SAT)
Collector-Emitter saturation
Voltage (1)
V
BE(SAT)
Base-Emitter saturation
Voltage (1)
2N2222A
-
2N2222
2N2222A
-
2N2222
2N2222A
-
2N2222
2N2222A
-
2N2222
2N2222A
40
30
2N2222
2N2222A
75
60
2N2222
6
2N2222A
5
2N2222
2N2222A
35
2N2222
2N2222A
50
2N2222
2N2222A
75
2N2222
2N2222A
35
-
2N2222
2N2222A
50
2N2222
2N2222A
100
2N2222
2N2222A
40
30
2N2222
-
2N2222A
-
2N2222
-
2N2222A
-
2N2222
-
2N2222A
-
2N2222
-
2N2222A
-
2N2222
V
Symbol
f
T
h
fe
Ratings
Transition frequency
Small signal current gain
Test Condition(s)
I
C
=20 mA, V
CE
=20 V
f= 100MHz
I
C
=1 A, V
CE
=2.0 V
Min Typ Mx Unit
-
-
-
-
-
-
-
-
3/3
MHz
-
2N2222A
250
300
2N2222
3
2N2222A
2.5
2N2222
COMSET SEMICONDUCTORS
NPN 2N2222 – 2N2222A
PNP 2N2907 – 2N2907A
Symbol
t
d
t
r
C
C
C
E
r
b
,C
C
Ratings
Delay time
Rise time
Collector capacitance
Emitter capacitance
Feedback time constant
Test Condition(s)
I
C
=150 mA ,I
B
=15 mA
-V
BE
=0.5 V
I
E
= I
e
= 0 ,V
CB
=10 V
f = 100kHz
I
C
= I
c
= 0 ,V
EB
=0.5 V
f = 100kHz
I
C
=20 mA, V
CE
=20 V
f= 31.8MHz
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
25
8
25
-
150
-
ns
pF
pF
ps
2N2222A
2N2222A
2N2222A
2N2222
2N2222A
2N2222
2N2222A
2N2222
(1) Pulse conditions : tp < 300
µs, δ
=2%
MECHANICAL DATA CASE TO-18
DIMENSIONS
mm
A
B
D
E
F
G
H
I
L
Pin 1 :
Pin 2 :
Pin 3 :
12,7
0,49
5,3
4,9
5,8
2,54
1,2
1,16
45°
inches
0,5
0,019
0,208
0,193
0,228
0,1
0,047
0,045
45°
Emitter
Base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
