., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201) 376-8960
SILICON
2N3724 2N4013
!5 2N4014
2N4013-14
HIGH SPEED NPN SILICON
PLANAR EPITAXIAL
HIGH-VOLTAGE HIGH-CURRENT
TRANSISTORS
•
•
•
•
•
•
High Voltage: 80V min. 2N3725. 2N4014
High Gain: 65 typ. @ 1000 mA
Low V
CE
(sat): 0.5V typ. © 1000 mA
Low C
ob
: 4.8 pF typ. © 10V. 2N3725, 2N4014
Fast t
on
: 18 nsec typ.
@
500mA
Fast t
oH
: 45 nsec typ. @ 500mA
2N3724-25
I
ACTUAL SIZE
DIMENSIONS
ACTUAL SIZE
DIMENSIONS
K&'-t
£
SJ
M
tfl
n
n
TO-18
TO-5
«
The ITT 2N3724 • 2N3725 and 2N4013 • 2N4014 are high-
voltage, high-current NPN silicon planar epitaxial transistors useful
for applications requiring breakdown voltages up to 50V and
operating current to one ampere. Low saturation voltage and fast
switching times make the transistor ideal for high-frequency
amplifiers, core drivers, relay drivers and pulse generators.
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Collector-to-Base Voltage
Collector-to- Emitter Voltage (shorted base)
Collector-to- Emitter Voltage (open base)
Emitter- to- Base Voltage
Collector Current (300
nsec;
1% duty cycle)
Junction Temperature (op. and stg.)
Maximum Power Dissipation
Total Dissipation @ T
C
«25'C
(derate above 25°C)
Total Dissipation @T
A
=25°C
(derate above 25°C) . •;
2N3724
2N4013
50
2N3725
2IM4014
80
80
50
60
UNITS
Volts
Volts
Volts
Volts
Amps
°C
....
50
30
60
...
10
10
— 65 to
+200
2N4013
2N4014
2N3724
2N3725
12
(68 mW/°C)
036
f2.06 mW/°C)
35
(20mW/°C)
08
f4.56 mW/°C)
Watts
Watts
<y\EUf
Qe.iie.ij
<SE.rn.i-dontLu.ctoi ZPioducti, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN.
25°C unless otherwise noted.
UNIT
MAX.
Vdc
Vdc
Vdc
Vdc
FAX: (201) 376-8960
2N3724
;
2N4013
TYP. MAX.
2N3725
2N4014
MIN.
TYP.
•
' f '
i
.
„ '.
•
CONDITIONS
BVceo
BVCES
LVcEO
1
'
2
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50
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lc=10MA
I
C
= 10MA
lc=10mA
I
E
=10MA
l
c
= 10mA
l
c
= 100mA
l
c
= 300mA
lc = 500mA
l
c
= 800mA
l
c
= 1000mA
l
c
= 100mA
l
c
= 500mA
V
CE
= 1.0V
V
CE
= 1.0V
V
CE
= 1.0V
V
CE
= 1.0V
V
CE
= 2.0V
V
CE
= 5.0V
V
CE
= 1.0V T
A
= ~55°C
V
CE
= 1.0V T
A
= -55°C
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Vdc
Vdc
Vdc
MA
lc = 10mA
l
B
= 1.0mA
l
c
= 100mA
=10mA
lc= 300mA
=30mA
l
c
= 500mA
=50mA
l
c
= 800mA
=80mA
l
c
= 1000mA
= 100mA
l
c
= 10mA
l
c
= 100mA
lc = 300mA
l
c
=r 500mA
l
c
= 800mA
l
c
= 1000mA
V
CB
= 40V
V
CB
= 60V
V
CB
=40V
V
CB
= 60V
V
CB
= 10V
V,
E
(sat)'
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B
= 1.0mA
B
= 10mA
B
= 30mA
B
= 50mA
B
= 80mA
B
=100mA
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MA
MA
MA
PF
pF
T
A
= 100°C
T
A
= 100°C
C
eb
c
fc
•• '•
6.0
40
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55
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EB
= 0.5V
hi.
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l
c
= 50mA
f=100MHz
nsec
l
c
- 500mA
hi«50mA
lB>»50mA
V
CE
= 10V
IWITCHINV tlMC TItT CIRCUIT
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NOTES:
1. Pulsed width <300 jusec; 1
%
duty cycle.
2. Lowest emitter-to-collector voltage.
• •:>•'. ••
\-c ••&: *:3&:-'
•>••• \:45-'^
;
60V :
: ;'•:;: 45 .;^GO ,
, _ •
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nsec
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H&
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1^=**"
DUTY CYCLE <1%
