2N3810
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3810J)
•
JANTX level (2N3810JX)
•
JANTXV level (2N3810JV)
•
JANS level (2N3810JS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Matched Dual transistors
•
PNP silicon transistor
Features
•
•
•
•
Hermetically sealed TO-78 metal can
Also available in chip configuration
Chip geometry 0220
Reference document:
MIL-PRF-19500/336
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
T
J
T
STG
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
60
60
5
50
300 one section
600 both sections
1.71one section
3.43 both sections
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/°C
°C
°C
Copyright 2
010
Rev. G
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N3810
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE3-1
/h
FE3-2
V
BE
|V
BE1
-V
BE2
|
1
|V
BE1
-V
BE2
|
2
|V
BE1
-V
BE2
|
3
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 10
µA,
V
CE
= 5 Volts
I
C
= 100
µA,
V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10 mA, V
CE
= 5 Volts
I
C
= 100
µA,
V
CE
= 5 Volts
T
A
= -55°C
I
C
= 100
µA,
V
CE
= 5 Volts
V
CE
= 5 Volts, I
C
= 100
µA
V
CE
= 5 Volts, I
C
= 10
µA
V
CE
= 5 Volts, I
C
= 100
µA
V
CE
= 5 Volts, I
C
= 10 mA
I
C
= 100
µA,
I
B
= 10
µA
I
C
= 1 mA, I
B
= 100
µA
I
C
= 100
µA,
I
B
= 10
µA
I
C
= 1 mA, I
B
= 100
µA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
EBO1
I
EBO2
Test Conditions
I
C
= 100
µA
V
CB
= 60 Volts
V
CB
= 50 Volts
V
CB
= 50 Volts, T
A
= 150°C
V
EB
= 5 Volts
V
EB
= 4 Volts
Min
60
10
10
10
10
10
Typ
Max
Units
Volts
µA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
100
150
150
125
60
0.9
Typ
Max
450
450
Units
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Voltage
1.0
0.7
5
3
5
0.7
0.8
0.20
0.25
Volts
mVolts
mVolts
mVolts
Volts
Volts
Copyright
2010
Rev. G
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3810
Silicon PNP Transistor
Data Sheet
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Symbol
|h
FE1
|
|h
FE2
|
h
FE
C
OBO
C
IBO
Test Conditions
V
CE
= 5 Volts, I
C
= 500
µA,
f = 30 MHz
V
CE
= 5 Volts, I
C
= 1 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
CE
= 10 Volts, I
C
= 100
µA,
R
g
= 3 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
V
CE
= 10 Volts, I
C
= 100
µA,
R
g
= 3 kΩ
10 Hz < f < 15.7 kHz
V
CB
=10V, I
C
=1mA, f =1kHz
V
CB
=10V, I
C
=1mA, f =1kHz
V
CB
=10V, I
C
=100µA, f=1kHz
Min
1
1
150
5
600
5
8
pF
pF
Typ
Max
Units
Noise Figure
NF
1
NF
2
NF
3
NF
h
ie
h
oe
h
re
7
3
2.5
3.5
3
5
30
60
25x10
-4
dB
Noise Figure (wideband)
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit reverse Voltage Transfer
Ratio
dB
kΩ
µΩ
Copyright 20
q0
Rev. G
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 3 of 3
www.SEMICOA.com
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