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2N6261.MOD

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:TT Electronics plc

厂商官网:http://www.ttelectronics.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
TO-66, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
4 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
5
JEDEC-95代码
TO-66
JESD-30 代码
O-MBFM-P2
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子形式
PIN/PEG
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
0.8 MHz
Base Number Matches
1
文档预览
2N6261
MECHANICAL DATA
Dimensions in mm(inches)
HOMETAXIAL-BASE
MEDIUM POWER SILICON
NPN TRANSISTOR
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
FEATURES
0.71 (0.028)
0.86 (0.034)
• f
T
= 800 kHz at 0.2A
11.94 (0.470)
12.70 (0.500)
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
• Maximum Safe-area of operation curves
for dc and pulse operation.
• V
CEV(sus)
= 90V min
• Low Saturation Voltage:
V
CE(sat = 1.0V at
I
C = 0.5A)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
APPLICATIONS
• Power Switching Circuits
• Series and shunt-regulator driver and
output stages
• High-fidelity amplifers
• Solenoid Drivers
TO–66
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
CER(sus)
V
CEV(sus)
V
EBO
I
C
I
B
P
D
T
j
,T
stg
,
Collector – Base Voltage
Collector – Emitter Voltage (with base open)
External Base – Emitter (RBE) = 100
W
)
Collector – Emitter Voltage (with base reverse biased)
Emitter to Base Voltage
Continuous Collector Current
Continuous Base Current
Total Power Dissipation at Tcase = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
90V
80V
85V
90V
7V
4A
2A
50W
0.200°C
–65 to 200°C
In accordance with JEDEC registration data format
THERMAL CHARACTERISTICS
R
q
JC
Thermal Resistance, Junction to Case
3.5 °C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
7/00
2N6261
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CEO
I
CEV
I
EBO
V
CEO(sus)
V
CER(sus)
h
FE
V
CE(sat)
V
BE
Collector Cut-off Current
with base open
Collector – Cut-off Current
Emitter Cut-off Current
Collector – Emitter Sustaining
Voltage with base open*
External Base to Emitter
Resistance
D.C Forward Current*
Collector to Emitter Saturation
Voltage*
Base – Emitter Voltage
Common Emitter Small Signal
f
hfe
Short Circuit, Forward Current
Transfer Ratio Cut off
Frequency
V
CE
= 4V
I
C
= 0.1
0.03
MHz
Test Conditions
V
CE
= 60V
V
CE
= 80V
V
BE
= -7V
I
C
= 0.1A
V
BE
= 5V
V
CE
= 2V
V
CE
= 2V
I
C
= 1.5A
V
CE
= 2V
I
B
= 0
V
BE
= -1.5V
T
c
= 150°C
I
B
= 0
I
B
= 0
(R
BE
) = 100
W
I
C
= 4A
I
C
= 1.5A
I
B
= .0.15A
I
C
= 1.5
Min.
Typ.
Max. Unit
0.5
0.5
1.0
0.2
mA
80
V
85
5
25
100
0.5
V
1.5
*
Pulse test tp =300
m
s
d
£
1.8%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
7/00
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