Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN
厂商名称:Thales Group
下载文档型号 | 2N6660 | 2N6659 |
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描述 | Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | Power Field-Effect Transistor, 35V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN |
零件包装代码 | TO-39 | TO-39 |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
针数 | 3 | 3 |
Reach Compliance Code | unknown | unknown |
最小漏源击穿电压 | 60 V | 35 V |
最大漏源导通电阻 | 3 Ω | 1.8 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-39 | TO-39 |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 |
端子数量 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | METAL | METAL |
封装形状 | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | NO | NO |
端子形式 | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON |
Base Number Matches | 1 | 1 |