CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 0.300 Ampere
APPLICATION
* Relay driver
* High speed line driver
* Logic level transistor
2N7002ESPT
FEATURE
.041 (1.05)
.033 (0.85)
SOT-23
.019 (0.50)
(3)
.110 (2.80)
.082 (2.10)
.066 (1.70)
.119 (3.04)
* Rugged and reliable.
* High saturation current capability.
* ESD protect in input gate
1.5KV
(1)
(2)
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
MARKING
*
PK1
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
* Small surface mounting type. (SOT-23)
* High density cell design for low R
DS(ON)
.
* Suitable for high packing density.
CIRCUIT
1
G
D
3
.045 (1.15)
.033 (0.85)
S
2
T
A
= 25°C unless otherwise noted
Dimensions in inches and (millimeters)
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
2N7002ESPT
Units
V
DSS
Drain-Source Voltage
60
60
V
V
V
mA
mW
mW
°C
°C
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
±
20
±
40
300
190
830
500
-65 to 150
300
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
=100°C
I
D
P
D
T
J
,T
STG
T
L
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
350
°C/W
RATING CHARACTERISTIC CURVES ( 2N7002ESPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 1)
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 48 V, V
GS
= 0 V
T
J
=150°C
V
GS
= 15 V, V
DS
= 0 V
V
GS
= -15 V, V
DS
= 0 V
60
75
1.0
10
500
-500
V
µA
uA
nA
nA
ON CHARACTERISTICS
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1.0 mA
V
GS
= 4.5 V, I
D
= 75 mA
1
2.0
2.8
3.8
2.5
5.0
5.3
V
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 500 mA
Forward Transconductance
V
DS
= 10 V
DS(on)
, I
D
= 200 m A
100
Ω
mS
300
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
t
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
13
8
4
3
9
40
30
10
10
15
pF
V
DD
= 50 V, R
L
= 250
Ω
,
V
GS
= 10 V, R
GEN
= 50
Ω
V
DD
= 50 V, R
L
= 250
Ω
,
V
GS
= 10 V, R
GEN
= 50
Ω
nS
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
t
rr
Q
r
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Recovery Charge
V
GS
= 0 V, I
S
= 200 mA
(Note 1)
I
S
= 300 mA, dI
S
/dt=-100 A/uS
V
GS
= 0 V, V
DS
= 25 V
0.85
30
30
300
1.2
1.5
mA
A
V
nS
nC
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
RATING CHARACTERISTIC CURVES ( 2N7002ESPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
. 0.5
10
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
9
TJ = 25°
I
D
, DRAIN-SOURCE CURRENT (A)
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.4
V
GS
=3.5V
.
4.0
.
TJ = 25°
V
GS
= 10V
8
7
6
5
4
3
2
1
5
0
0 .1
. 0.3
4.5
4.0
3.5
3.0
0
0.5
1.0
1.5
2.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
4.5
0.2
10
0.1
0
0 .2
0.3
I
D
, DRA IN CURRENT (A)
0.4
0.5
Figure 3. On-Resistance Variation
with Temperature
3.0
Figure 4. Sub-Threshold Drain Current
with Gate - Source Voltage
1 0
-1
R
DS(ON)
/R
DS(ON)
25
O
C
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
2.0
1.5
1.0
0.5
0
-5 0
10
-2
I
D
, DRAINCURRENT (A)
10
-3
min.
typ.
10
-4
10
-5
-2 5
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
10
-6
0
0.5
1.0
1.5
2.0
V
GS
, GATE-SOURCE VOLTAGE (V)
2.5
3.0
Figure 5. Transfer Characteristics
0.5
120
Figure 6. Power Derating Curve
V
DS
>I
D
XR
DSON
0.4
I
D
, DRAIN CURRENT (A)
Pder=Ptot/Ptot(25
O
C) POWER RATIO (%)
100
80
60
40
20
0
TJ = 25° C
0.3
150°C
0.2
0.1
0
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0
25
50
75
100
125
150
T
J
, JUNCTION TEM PERATURE (°C)
175
200
RATING CHARACTERISTIC CURVES ( 2N7002ESPT )
Typical Electrical Characteristics
(continued)
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
2
1
Figure 7. Gate-Source Threshold Voltage
with Temperature
3.5
I
D
=1mA, V
DS
=V
GS
THRESHOLD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
min.
1.0
0.5
0
-50
typ.
V
GS
= 0V
V
GS(th)
, GATE-SOURCE
0 .5
TJ = 1 5 0 ° C
0 .1
0 .0 5
25°C
0 .0 1
0 .0 0 5
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
0 .0 0 1
0 .2
0 .4
V
SD
0 .6
0 .8
1
1 .2
1 .4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Capacitance Characteristics
g
fs
, FORWARD TRANSCONDUCTANCE (S)
60
40
20
10
5
.25
Figure 10. Forward Transconductance
T
J
= 2 5
O
C
.20
CAPACITANCE (pF)
C iss
.15
C oss
.10
T
J
= 1 5 0
O
C
2
1
f = 1 MH z
V
GS
= 0V
1
2
V
DS
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
.05
C rss
50
0
0
0 .1
0 .2
0 .3
I
D
, DRAIN CURRENT (A)
0 .4
0.5
Figure 11.
Figure 12. Switching Waveforms
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
10%
50%
50%
S
Pulse Width
RATING CHARACTERISTIC CURVES ( 2N7002ESPT )
Typical Electrical Characteristics
(continued)
Figure 13. Maximum Safe Operating Area
30
20
I
D
, DRAIN CURRENT (A)
10
5
R
DSON
=V
DS
/I
D
T
A
=25
O
C
10u
s
1
0.5
100m
s
100
10ms
DC
1ms
us
0.1
0.05
1
2
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
20
30
60
80
Figure 14. Transient Thermal Response Curve
1000
TRANSIENT THERMAL RESISTANCE
Rth(J-S), NORMALIZED EFFECTIVE
100
D = 0.5
0 .2
0.1
0 .0 5
0 .0 2
Single Pulse
P(pk)
10
t
1
t
2
Duty Cycle, D = t
1
/ t
2
2
1
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1.0
10
300
