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2N7228

12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

器件类别:分立半导体    晶体管   

厂商名称:SEMELAB

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器件:2N7228

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
包装说明
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
compliant
其他特性
AVALANCHE ENERGY RATING
雪崩能效等级(Eas)
750 mJ
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
500 V
最大漏极电流 (ID)
12 A
最大漏源导通电阻
0.515 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-254AA
JESD-30 代码
S-MSFM-P3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
METAL
封装形状
SQUARE
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
48 A
认证状态
Not Qualified
表面贴装
NO
端子形式
PIN/PEG
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2N7228
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
1
2
3
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
20.07 (0.790)
20.32 (0.800)
500V
12A
0.415Ω
3.81 (0.150)
BSC
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN A SURFACE
MOUNT PACKAGE
• EASE OF PARALLELING
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
R
θJC
R
θCS
R
θJA
Gate – Source Voltage
Continuous Drain Current
(V
GS
= 10V , T
case
= 25°C)
Continuous Drain Current
(V
GS
= 10V , T
case
= 100°C)
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature measured
1/16
” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V
DD
= 50V , L
9.4mH , R
G
= 25Ω , Peak I
L
= 12A , Starting T
J
= 25°C
3) @ I
SD
12A , di/dt
130A/µs , V
DD
BV
DSS
, T
J
150°C , Suggested R
G
= 2.35Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
4/99
2N7228
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
2
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
I
D
= 8A
I
D
= 12A
I
D
= 250µA
I
DS
= 8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
500
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.68
0.415
0.515
2
6.5
25
250
100
–100
2700
600
240
12
55
5
27
120
19
70
35
190
170
130
12
48
4
V / °C
V
S(Ω
µA
nA
)
(
4/99
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 12A
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
= 12A
R
G
= 2.35Ω
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
A
V
ns
µC
I
S
= 12A
V
GS
= 0
I
F
= 12A
T
J
= 25°C
T
J
= 25°C
Negligible
8.7
8.7
1.7
1600
14
d
i
/ d
t
100A/µs V
DD
50V
nH
Notes
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
300µs,
δ ≤
2%
* I
S
Current limited by pin diameter.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
查看更多>
参数对比
与2N7228相近的元器件有:2N7228R1、2N7228-QR-EB。描述及对比如下:
型号 2N7228 2N7228R1 2N7228-QR-EB
描述 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
是否无铅 含铅 不含铅 含铅
是否Rohs认证 不符合 符合 不符合
包装说明 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant compliant compliant
其他特性 AVALANCHE ENERGY RATING AVALANCHE ENERGY RATING AVALANCHE ENERGY RATING
雪崩能效等级(Eas) 750 mJ 750 mJ 750 mJ
外壳连接 ISOLATED ISOLATED ISOLATED
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 500 V 500 V 500 V
最大漏极电流 (ID) 12 A 12 A 12 A
最大漏源导通电阻 0.515 Ω 0.515 Ω 0.515 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-254AA TO-254AA TO-254AA
JESD-30 代码 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
元件数量 1 1 1
端子数量 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 METAL METAL METAL
封装形状 SQUARE SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 48 A 48 A 48 A
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
Base Number Matches 1 1 1
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