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2SA1415R

Small Signal Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, PCP, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
Objectid
1484020538
零件包装代码
SOT-89
包装说明
SMALL OUTLINE, R-PSSO-F3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.14 A
集电极-发射极最大电压
160 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JEDEC-95代码
TO-243
JESD-30 代码
R-PSSO-F3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
功耗环境最大值
1.3 W
最大功率耗散 (Abs)
0.5 W
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
文档预览
Ordering number:ENN1720A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1415/2SC3645
High-Voltage Switching,
Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage (V
CEO
=160V).
· Excellent linearity of h
FE
and small Cob.
· Fast switching speed.
· Ultrasmall size marking it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm
2038A
[2SA1415/2SC3645]
4.5
1.6
1.5
0.5
3
1.5
2
3.0
0.75
1
1.0
0.4
2.5
4.25max
0.4
( ) : 2SA1415
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC1
PC2
Tj
Tstg
Moutned on ceramic board (250mm
×0.8mm)
2
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Ratings
(–)180
(–)160
(–)5
(–)140
(–)200
500
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
mW
W
˚C
˚C
Conditions
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
R
100 to 200
S
140 S 280
T
200 to 400
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
100*
150
Conditions
Ratings
min
typ
max
(–)100
(–)100
400*
MHz
Unit
nA
nA
* : The 2SA1415/2SC3645 are classified by 10mA h
FE
as follows :
Rank
hFE
Continued on next page.
Marking 2SA1415 : AA
2SC3645 : CA
h
FE
rank : R, S, T
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/2145MW, TS No.1720-1/4
2SA1415/2SC3645
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
ton
tstg
tf
Conditions
VCB=(–)10V, f=1MHz
IC=(–)50mA, IB=(–)5mA
See sepcified Test Circuit.
See sepcified Test Circuit.
See sepcified Test Circuit.
Ratings
min
typ
(4.0)
3.0
(–0.14)
0.07
0.1
1.5
0.1
(–0.4)
0.3
max
Unit
pF
pF
V
V
µs
µs
µs
Switching Time Test Circuit
IB1
IN
3kΩ
IB2
OUT
2kΩ
50Ω
5kΩ
+
1µF
--2V
+
1µF
20V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
--140
IC -- VCE
2SA1415
A
6m
mA
-0.
-
--0.5
140
IC -- VCE
0.6
m
--120
120
m
0.5
A
2SC3645
A
0.3mA
A
Collector Current, IC – mA
--100
mA
--0.4
--0.3m
Collector Current, IC – mA
0.4m
100
A
--80
80
--60
--0.2mA
60
0.2mA
--40
40
--0.1mA
--20
0.1mA
20
0
0
IB=0
--10
--20
--30
--40
--50
--60
--70
0
IB=0
0
10
20
30
40
50
60
70
Collector-to-Emitter Voltage, VCE – V
ITR03510
--140
Collector-to-Emitter Voltage, VCE – V
140
ITR03511
IC -- VBE
2SA1415
IC -- VBE
2SC3645
--120
120
Collector Current, IC – mA
--100
Collector Current, IC – mA
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE – V
--
1.0
ITR03512
100
--80
80
--60
60
--40
40
--20
20
0
0
0
0
0.2
0.4
0.6
0.8
1.0
ITR03513
Base-to-Emitter Voltage, VBE – V
No.1720-2/4
2SA1415/2SC3645
1000
7
5
3
2
hFE -- IC
2SA1415
VCE=--5V
1000
7
5
3
2
hFE -- IC
2SC3645
VCE=5V
DC Current Gain, hFE
100
7
5
3
2
DC Current Gain, hFE
2
2
3
--
10
Collector Current, IC – mA
3
5
7
5
7
2
100
7
5
3
2
10
5
7
--
1.0
--
100
10
5
7 1.0
2
3
5
7
ITR03514
3
Collector Current, IC – mA
10
2
3
5
7 100
2
ITR03515
3
fT -- IC
Gain-Bandwidth Product, fT – MHz
fT -- IC
2SC3645
VCE=10V
Gain-Bandwidth Product, fT – MHz
2
2SA1415
VCE=--10V
2
100
7
5
100
7
5
3
2
3
2
10
--
1.0
2
3
2
3
5
--
10
Collector Current, IC – mA
5
7
7
--
100
2
10
1.0
2
3
5
7
10
2
3
5
ITR03516
100
Collector Current, IC – mA
7 100
2
ITR03517
100
7
Cob -- VCB
2SA1415
f=1MHz
Output Capacitance, Cob – pF
Cob -- VCB
2SC3645
f=1MHz
7
5
3
2
Output Capacitance, Cob – pF
5
3
2
10
7
5
3
2
10
7
5
3
2
1.0
--
1.0
2
2
2
3
5
7
--
100
--
10
Collector-to-Base Voltage, VCB -- V
ITR03518
3
5
7
1.0
1.0
2
3
5
7
Collector-to-Base Voltage, VCB -- V
10
2
3
5
100
ITR03519
7
VCE(sat) -- IC
2SA1415
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
1.0
7
5
3
2
VCE(sat) -- IC
2SC3645
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--
1.0
7
5
3
2
0.1
7
5
3
2
--
0.1
7
5
3
2
5
7
--
1.0
2
2
3
--
10
Collector Current, IC – mA
3
5
7
5
7
--
100
2
5
7 1.0
2
3
5
ITR03520
Collector Current, IC – mA
7 10
2
3
5
7 100
2
ITR03521
No.1720-3/4
2SA1415/2SC3645
--
10
7
VBE(sat) -- IC
2SA1415
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
VBE(sat) -- IC
2SC3645
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
3
2
--
1.0
7
5
1.0
7
5
3
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC – mA
3
5
7
7
--
100
2
3
5
7 1.0
2
3
5
7
10
2
3
5
ITR03522
3
Collector Current, IC – mA
7 100
2
ITR03071
1.6
1.4
PC -- Ta
2SA1415 / 2SC3645
ASO
ICP=200mA
IC=140mA
2SA1415 / 2SC3645
2
Collector Dissipation, P
C
– W
Collector Current, IC – mA
1.3
1.2
1.0
0.8
0.6
0.5
0.4
0.2
M
s
1m
s
0m
10
ou
nt
ed
100
7
5
3
2
on
ce
ra
m
ic
DC
bo
op
ar
d(
era
No h
e
25
0m
tio
n
at si
nk
m
2
×
0
.8m
m
)
10
7
0
0
20
40
60
80
100
120
140
160
5
For PNP, minus sign is omitted.
5
7
10
2
3
5
7
100
2
3
Ambient Temperature, Ta – ˚C
ITR03524
Collector-to-Emitter Voltage, VCE – V
ITR03525
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.1720-4/4
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参数对比
与2SA1415R相近的元器件有:2SA1415-R、2SC3645-R。描述及对比如下:
型号 2SA1415R 2SA1415-R 2SC3645-R
描述 Small Signal Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, PCP, 3 PIN Small Signal Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, PCP, 3 PIN Small Signal Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-243, PCP, 3 PIN
Objectid 1484020538 1484020538 1484020583
零件包装代码 SOT-89 SOT-89 SOT-89
包装说明 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
针数 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.14 A 0.14 A 0.14 A
集电极-发射极最大电压 160 V 160 V 160 V
配置 SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 100 100
JEDEC-95代码 TO-243 TO-243 TO-243
JESD-30 代码 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
元件数量 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP NPN
功耗环境最大值 1.3 W 1.3 W 1.3 W
最大功率耗散 (Abs) 0.5 W 0.5 W 0.5 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 FLAT FLAT FLAT
端子位置 SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 150 MHz 150 MHz 150 MHz
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