INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1746
DESCRIPTION
·Low
Collector Saturation Voltage
:V
CE(
sat
)
= -0.5(V)(Max)@I
C
= -5A
·Good
Linearity of h
FE
APPLICATIONS
·Designed
for chopper regulator, switch and
purpose applications
general
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-70
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
-12
A
I
CM
Collector Current-Peak
-20
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-4
A
P
C
60
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1746
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -25mA ; I
B
= 0
-50
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -80mA
B
-0.5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -5A; I
B
= -80mA
B
-1.2
V
I
CBO
Collector Cutoff Current
V
CB
= -70V ; I
E
= 0
-10
μA
I
EBO
Emitter Cutoff Current
V
EB
= -6V; I
C
= 0
-10
μA
h
FE
DC Current Gain
I
C
= -5A ; V
CE
= -1V
50
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= -10V;f= 1.0MHz
400
pF
f
T
Current-Gain—Bandwidth Product
I
E
= 1A ; V
CE
= -12V
25
MHz
Switching Times
t
on
Turn-on Time
I
C
= -5A , R
L
= 4Ω,
I
B1
= -I
B2
= -80mA,V
CC
= -20V
0.5
μs
t
stg
Storage Time
0.6
μs
t
f
Fall Time
0.3
μs
2
