2SC2396, 2SC2543, 2SC2544
Silicon NPN Epitaxial
Application
•
Low frequency amplifier
•
Complementary pair with 2SA1025, 2SA1081 and 2SA1082
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SC2396
60
60
5
100
–100
400
150
–55 to +150
2SC2543
90
90
5
100
–100
400
150
–55 to +150
2SC2544
120
120
5
100
–100
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SC2396
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol Min
V
(BR)CBO
60
V
(BR)CEO
60
V
(BR)EBO
5
I
CBO
I
EBO
—
—
250
—
—
—
—
Typ
—
—
—
—
—
—
—
0.6
90
3.0
Max
—
—
—
0.1
0.1
2SC2543
Min
90
90
5
—
—
Typ Max
—
—
—
—
—
—
—
0.6
90
3.0
—
—
—
0.1
0.1
1200
0.2
—
—
—
2SC2544
Min
120
120
5
—
—
250
—
—
—
—
Typ Max
—
—
—
—
—
—
—
0.6
90
3.0
—
—
—
0.1
0.1
800
0.2
—
—
—
V
V
Unit Test conditions
V
V
V
µA
µA
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA,
R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 50 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V,
I
C
= 2 mA
I
C
= 10 mA,
I
B
= 1 mA
V
CE
= 12 V,
I
C
= 2 mA
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
Base to emitter voltage
V
CE(sat)
V
BE
1200 250
0.2
—
—
—
—
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Cob
MHz V
CE
= 12 V,
I
C
= 2 mA
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h
FE1
as follows.
D
E
400 to 800
400 to 800
F
600 to 1200
—
250 to 500
250 to 500
2SC2396, 2SC2543
2SC2544
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
2
2SC2396, 2SC2543, 2SC2544
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
600
400
200
0
50
100
Ambient Temperature Ta (°C)
150
3
Unit: mm
4.8
±
0.3
3.8
±
0.3
2.3 Max
0.5
±
0.1
0.7
0.60 Max
12.7 Min
5.0
±
0.2
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
