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2SC2996-RTE85R

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknow
ECCN代码
EAR99
最大集电极电流 (IC)
0.05 A
基于收集器的最大容量
1.3 pF
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
40
最高频带
VERY HIGH FREQUENCY BAND
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
350 MHz
Base Number Matches
1
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参数对比
与2SC2996-RTE85R相近的元器件有:2SC2996-OTE85R、2SC2996-OTE85L、2SC2996-RTE85L、2SC2996-YTE85R、2SC2996-YTE85L、2SC2996TE85R、2SC2996TE85L。描述及对比如下:
型号 2SC2996-RTE85R 2SC2996-OTE85R 2SC2996-OTE85L 2SC2996-RTE85L 2SC2996-YTE85R 2SC2996-YTE85L 2SC2996TE85R 2SC2996TE85L
描述 TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
基于收集器的最大容量 1.3 pF 1.3 pF 1.3 pF 1.3 pF 1.3 pF 1.3 pF 1.3 pF 1.3 pF
集电极-发射极最大电压 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 40 70 70 40 120 120 40 40
最高频带 VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 350 MHz 350 MHz 350 MHz 350 MHz 350 MHz 350 MHz 350 MHz 350 MHz
Base Number Matches 1 1 1 1 1 1 1 1
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