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2SC3746-R

5A, 60V, NPN, Si, POWER TRANSISTOR, TO-220ML, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
Objectid
1481157003
零件包装代码
TO-220ML
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
unknown
外壳连接
ISOLATED
最大集电极电流 (IC)
5 A
集电极-发射极最大电压
60 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
20 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
文档预览
Ordering number : EN1973C
2SA1469 / 2SC3746
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1469 / 2SC3746
Applications
60V / 5A High-Speed Switching
Applications
Various inductance lamp drivers for electrical equipment.
Inverters, converters (flash, fluorescent lamp lighting circuit).
Power amp (high power car stereo, motor controller).
High-speed switching (switching regulator, driver).
Features
Low saturation voltage.
Excellent current dependence of hFE.
Short switching time.
Micaless package facilitating mounting.
Specifications
( ) : 2SA1469
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)80
(--)60
(-
-)5
(-
-)5
(-
-)7
2
20
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)1A
70*
Ratings
min
typ
max
(--)0.1
(--)0.1
280*
Unit
mA
mA
*
: The 2SA1469/2SC3746 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM TC-00000112 / 72506FA MS IM TC-00000058 / O3103TN (KT) / 71598HA (KT) / 3277KI / N265KI No.1973-1/4
2SA1469 / 2SC3746
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(--)5V, IC=(-
-)1A
IC=(--)2.5A, IB=(--)0.125A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)80
(--)60
(--)5
0.1
0.5
0.1
Ratings
min
typ
100
(--)0.4
max
Unit
MHz
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7508-002
Switching Time Test Circuit
IB1
10.0
3.2
3.5
7.2
4.5
2.8
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB2
RB
OUTPUT
RL
10Ω
+
+
470µF
VCC=20V
16.0
100µF
VBE= --5V
1.6
1.2
0.75
14.0
5.6
18.1
20IB1= --20IB2=IC=2A
0.7
For PNP, the polarity is reversed.
1 2 3
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2.55
2.55
--
6
--
5
Collector Current, IC -- A
--
4
IC -- VBE
2SA1469
VCE= --2V
6
IC -- VBE
2SC3746
VCE=2V
5
Collector Current, IC -- A
4
Ta=1
20
°
C
°
C
25
°
C
25
°
C
0.8
--
2
--
1
0
0
Ta=1
20
--
3
--40
°
C
3
2
1
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
Base-to-Emitter Voltage, VBE -- V
ITR03647
0
0
0.2
0.4
0.6
1.0
1.2
ITR03648
Base-to-Emitter Voltage, VBE -- V
--40
°
C
No.1973-2/4
2SA1469 / 2SC3746
1000
7
5
3
hFE -- IC
2SA1469
VCE= --2V
1000
7
5
3
hFE -- IC
2SC3746
VCE=2V
Ta=120
°C
DC Current Gain, hFE
DC Current Gain, hFE
2
100
7
5
3
2
10
7
5
3
--
0.01 2
25
°C
--40
°C
2
100
7
5
3
2
10
7
5
Ta=120
°C
25
°C
--40
°C
3
5 7
--
0.1
--
1.0 2 3
Collector Current, IC -- A
2
5 7
3
5 7
--
10
2
3
0.01
2 3
5 7 0.1
2
3
5 7 1.0
2 3
ITR03649
2
2
f T -- IC
Collector Current, IC -- A
5 7 10
2
ITR03650
f T -- IC
Gain-Bandwidth Product, f T -- MHz
100
7
5
Gain-Bandwidth Product, f T -- MHz
2SA1469
VCE= --5V
2SC3746
VCE=5V
100
7
5
3
2
3
2
10
7
5
5 7
--
0.01 2 3
5 7
--
0.1
2
3
5 7
--
1.0
2 3
5 7
10
7
5
--
10
100
5 7 0.01
2
3
5 7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
--
100
ITR03651
VCE(sat) -- IC
Collector Current, IC -- A
5 7 10
ITR03652
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
2SA1469
IC / IB=20
5
3
2
10
5
3
2
1.0
5
3
2
0.1
5
3
2
0.01
0.01
2SC3746
IC / IB=20
--
10
5
3
2
--
1.0
5
3
2
--
0.1
5
3
2
--
0.01
--
0.01
2
3
5
--
0.1 2 3 5 7
--
1.0
Collector Current, IC -- A
7
2
3
5
7
--
10
2
3
5
7 0.1
2
3
5 7 1.0
2
3
ITR03653
10
7
5
--
10
7
5
ASO
Collector Current, IC -- A
7 10
ITR03654
5
ASO
ICP= --7A
IC= --5A
2SA1469
ICP=7A
IC=5A
2SC3746
Collector Current, IC -- A
2
Collector Current, IC -- A
3
3
2
s
1m
ms
s
on
10
0m
ati
10
per
o
--
1.0
7
5
3
2
1m
DC
s
1.0
7
5
3
2
0.1
7
5
s
m
s
on
10
0m
rati
10
ope
DC
--
0.1
Tc=25°C
7
Single Pulse
5
2
3
2
3
5
7
--
10
--
100
Collector-to-Emitter Voltage, VCE -- V
ITR03655
5
7
Tc=25°C
Single Pulse
2
3
5
7
10
2
3
5
7
100
Collector-to-Emitter Voltage, VCE -- V
ITR03656
No.1973-3/4
2SA1469 / 2SC3746
2.5
PC -- Ta
2SA1469 / 2SC3746
25
PC -- Tc
2SA1469 / 2SC3746
Collector Dissipation, PC -- W
2.0
Collector Dissipation, PC -- W
120
140
160
20
1.5
No
15
he
at
1.0
sin
k
10
0.5
5
0
0
20
40
60
80
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT11350
Case Temperature, Tc --
°C
IT11351
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
PS No.1973-4/4
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参数对比
与2SC3746-R相近的元器件有:2SA1469-R、2SC3746-Q、2SC3746-S、2SA1469-Q、2SA1469-S。描述及对比如下:
型号 2SC3746-R 2SA1469-R 2SC3746-Q 2SC3746-S 2SA1469-Q 2SA1469-S
描述 5A, 60V, NPN, Si, POWER TRANSISTOR, TO-220ML, 3 PIN 5A, 60V, PNP, Si, POWER TRANSISTOR, TO-220ML, 3 PIN Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN
零件包装代码 TO-220ML TO-220ML TO-220ML TO-220ML TO-220ML TO-220ML
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknow unknown
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 5 A 5 A 5 A 5 A 5 A 5 A
集电极-发射极最大电压 60 V 60 V 60 V 60 V 60 V 60 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 100 100 70 140 70 140
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 140 °C 150 °C 150 °C 140 °C 140 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN PNP NPN NPN PNP PNP
最大功率耗散 (Abs) 20 W 20 W 2 W 20 W 20 W 20 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Objectid 1481157003 1481156700 1991532202 1991532204 - 1991532184
ECCN代码 - - EAR99 EAR99 EAR99 EAR99
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