DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ461
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ461 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ461 has excellent switching characteristics and is
suitable for use as a high-speed switching device in digital circuit.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4
–0.05
+0.1
1.5
0.65
–0.15
+0.1
FEATURES
•
Can be driven by a 2.5 V power source
•
Not necessary to consider driving current because of its high
input impedance.
resistor.
•
Possible to reduce the number of parts by omitting the bias
2.9 ±0.2
0.95
2
3
1
0.4
+0.1
–0.05
0.95
Marking
0.3
1.1 to 1.4
0.16
–0.06
+0.1
ORDERING INFORMATION
PART NUMBER
2SJ461
PACKAGE
SC-59 (Mini Mold)
Marking: H19
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−50
m7.0
m0.1
m0.2
200
150
−55
to +150
V
V
A
A
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
0 to 0.1
1. Source
2. Gate
3. Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Gate
Gate
Protection
Diode
Body
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D10730EJ4V0DS00 (4th edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1995
2SJ461
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
TEST CONDITIONS
V
DS
=
−50
V, V
GS
= 0 V
V
GS
=
m
7.0 V, V
DS
= 0 V
V
DS
=
−3.0
V, I
D
=
−1.0
µ
A
V
DS
=
−3.0
V, I
D
=
−10
mA
V
GS
=
−2.5
V, I
D
=
−3
mA
V
GS
=
−4.0
V, I
D
=
−10
mA
V
DS
=
−3.0
V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−3.0
V, I
D
=
−20
mA
V
GS
=
−3.0
V
R
G
= 10
Ω,
R
L
= 200
Ω
−0.7
12
46
31
6
9
1.6
32
270
45
130
100
50
−0.9
MIN.
TYP.
MAX.
−1.0
UNIT
µ
A
µ
A
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
m
3.0
−1.3
TEST CIRCUIT SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
(−)
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
90%
90%
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D10730EJ4V0DS
2SJ461
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
P
T
- Total Power Dissipation - mW
200
160
120
80
40
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
˚C
Data Sheet D10730EJ4V0DS
3
2SJ461
4
Data Sheet D10730EJ4V0DS
2SJ461
•
The information in this document is current as of April, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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•
Descriptions of circuits, software and other related information in this document are provided for illustrative
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•
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