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2SK2552BCJ-A

TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,320UA I(DSS),SC-75

器件类别:分立半导体    晶体管   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
Reach Compliance Code
compli
FET 技术
JUNCTION
最高工作温度
125 °C
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
0.1 W
表面贴装
YES
Base Number Matches
1
文档预览
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK2552B
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK2552B is suitable for converter of ECM.
General-purpose product.
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
1.6 ±0.1
Low noise:
−108.5
dB TYP. (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ)
Especially suitable for audio and telephone
Small package:
SC-75 (USM)
0.8 ±0.1
FEATURES
3
0 to 0.1
2
0.2
+0.1
–0
0.5
TYP.
0.5
TYP.
1
0.6
TYP.
0.75 ±0.05
1.0 TYP.
1.6 ±0.1
ORDERING INFORMATION
PART NUMBER
2SK2552B
PACKAGE
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
−1.0
V)
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
−20
10
10
100
125
−55
to +125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17282EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
2SK2552B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
SYMBOL
I
DSS
V
GS(off)
| y
fs1
|
| y
fs2
|
Input Capacitance
Voltage Gain
C
iss
G
V
TEST CONDITIONS
V
DS
= 2.0 V, V
GS
= 0 V
V
DS
= 2.0 V, I
D
= 1.0
µ
A
V
DS
= 2.0 V, I
D
= 30
µ
A, f = 1.0 kHz
V
DS
= 2.0 V, V
GS
= 0 V, f = 1.0 kHz
V
DS
= 2.0 V, V
GS
= 0 V, f = 1.0 MHz
V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ,
V
IN
= 10 mV, f = 1 kHz
Noise Voltage
NV
V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ,
A-curve
−108.5
dB
300
750
MIN.
90
TYP.
200
−0.37
480
1300
4.0
−1.0
MAX.
430
−1.0
UNIT
µ
A
V
µ
S
µ
S
pF
dB
I
DSS
CLASSIFICATION
MARKING
I
DSS
(
µ
A)
CE
90 to 180
CF
150 to 240
CH
210 to 350
CJ
320 to 430
VOLTAGE GAIN TEST CIRCUIT
V
DD
R
L
Out
C
NOISE VOLTAGE TEST CIRCUIT
V
DD
R
L
JIS A
NV (r.m.s)
C
2
Data Sheet D17282EJ1V0DS
2SK2552B
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
800
600
400
200
0
0
2
4
6
8
10
V
GS
= 0.2 V
−0.2
V
−0.3
V
0.1 V
dT - Derating Factor - %
I
D
- Drain Current -
µ
A
0V
−0.1
V
T
A
- Ambient Temperature - °C
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
- Gate to Source Current -
µ
A
1600
40
30
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2.0 V
1400
I
D
- Drain Current -
µ
A
20
10
−0.8 −0.6 −0.4 −0.2
0 0.2
−10
−20
−30
−40
0.4 0.6 0.8
1200
1000
800
600
400
200
0
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
V
GS
- Gate to Source Voltage - V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
10
| y
fs
| - Forward Transfer Admittance - mS
V
GS(off)
- Gate Cut-off Voltage - V
V
GS
= 0 V
f = 1.0 MHz
V
DS
= 2.0 V
C
iss
- Input Capacitance - pF
| y
fs
|
1
V
GS(off)
1
1
10
100
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
DSS
- Zero Gate Voltage Drain Current -
µ
A
Data Sheet D17282EJ1V0DS
3
2SK2552B
VOLTAGE GAIN vs. DRAIN CURRENT
NOISE VOLTAGE vs. DRAIN CURRENT
3
2
G
V
- Voltage Gain - dB
1
0
−1
−2
−3
−4
−5
10
NV - Noise Voltage - dB
V
DD
= 2.0 V
C = 5 pF
R
L
= 2.2 kΩ
V
IN
= 10 mV
f = 1 kHz
−103
−105
−107
−109
−111
−113
−115
V
DD
= 2.0 V
C = 5 pF
R
L
= 2.2 kΩ
100
I
DSS
- Drain Current -
µ
A
1000
10
100
I
DSS
- Drain Current -
µ
A
1000
4
Data Sheet D17282EJ1V0DS
2SK2552B
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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参数对比
与2SK2552BCJ-A相近的元器件有:2SK2552BCJ-AT、2SK2552BCE-A、2SK2552BCE-AT、2SK2552BCF-AT。描述及对比如下:
型号 2SK2552BCJ-A 2SK2552BCJ-AT 2SK2552BCE-A 2SK2552BCE-AT 2SK2552BCF-AT
描述 TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,320UA I(DSS),SC-75 TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,320UA I(DSS),SC-75 TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SC-75 TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,90UA I(DSS),SC-75 TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,150NA I(DSS),SC-75
是否Rohs认证 符合 符合 符合 符合 符合
Reach Compliance Code compli compli compli compli compli
FET 技术 JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
表面贴装 YES YES YES YES YES
Base Number Matches 1 1 1 1 1
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