V
CE
I
C
=
=
1200 V
100 A
IGBT-Die
5SMX 12L1280
Die size: 12.6 x 12.6 mm
Doc. No. 5SYA1309-03 04 14
Low loss, rugged SPT technology
Smooth switching for good EMC
Large bondable emitter area
Passivation: Silicon Nitride plus Polyimide
Optimized for high DC-link voltage applications
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 900 V, V
CEM
1200 V
V
GE
15 V, T
vj
125 °C
Limited by T
vjmax
V
GE
= 0 V, T
vj
25 °C
min
max
1200
100
200
Unit
V
A
A
V
µs
°C
-20
20
10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SMX 12L1280
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2)
Symbol Conditions
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
R
Gint
t
d(on)
t
r
t
d(off)
t
f
V
CC
= 600 V, I
C
= 100 A,
R
G
= 10
,
V
GE
=
15
V,
L
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 100 A,
R
G
= 10
,
V
GE
=
15
V,
L
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 100 A,
V
GE
= ±15 V, R
G
= 10
,
L
= 60 nH,
inductive load,
FWD: 5SLX12H1200
V
CC
= 600 V, I
C
= 100 A,
V
GE
= ±15 V, R
G
= 10
,
L
= 60 nH,
inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
GE
= 0 V, I
C
= 1 mA, T
vj
= 25 °C
I
C
= 100 A, V
GE
= 15 V
V
CE
= 1200 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1200
typ
max
Unit
V
2.0
2.2
100
200
-200
4.5
1300
9.38
0.61
0.39
4
220
260
65
70
550
620
40
65
8.6
200
6.5
V
V
µA
µA
nA
V
nC
nF
ns
ns
ns
ns
V
CE
= 0 V, V
GE
=
20
V, T
vj
= 125 °C
I
C
= 4 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 100 A, V
CE
= 600 V, V
GE
= -15 ..15 V
Turn-on switching energy
E
on
mJ
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
12.5
6.9
mJ
11.0
540
A
Turn-off switching energy
E
off
Short circuit current
2)
I
SC
t
psc
≤ 10 μs, V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 900 V, V
CEM
≤ 1200 V
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1309-03 04 14
page 2 of 5
5SMX 12L1280
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W (except gate pad)
front metal
gate pad
thickness
Metallization
3)
Unit
12.6
x
12.6
11.0
x
11.0
1.2
x
1.2
140 ± 20
AlSi1
Al / Ti / Ni / Ag
4
1.8
mm
mm
mm
µm
µm
µm
L
x
W
front (E)
3)
back (C)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Form of delivery
Description
Unsawn 6" wafer die
Sawn 6" wafer die (on blue tape)
Part number
5SMX 76L1280
5SMX 86L1280
Outline drawing
G
Emitter
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1309-03 04 14
page 3 of 5
5SMX 12L1280
200
175
150
125
I
C
[A]
200
V
CE
= 20 V
25 °C
125 °C
175
150
125
I
C
[A]
100
75
50
25
V
GE
= 15 V
0
0
1
2
V
CE
[V]
3
4
100
75
50
25 °C
25
0
0
1
2
3
4
5
6
V
GE
[V]
7
8
9
10 11 12
125 °C
Fig. 1
Typical on-state characteristics
Fig. 2
Typical transfer characteristics
100
V
CC
= 600 V
R
G
= 10 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
40
35
30
25
V
CC
= 600 V
I
C
= 100 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
75
E
on
E
on
, E
off
[mJ]
E
on
, E
off
[mJ]
50
E
on
20
15
E
off
10
25
E
off
5
0
0
50
100
150
I
C
[A]
200
250
300
0
0
10
20
30
40
R
G
[ohm]
50
60
70
Fig. 3
Typical switching characteristics vs
collector current
Fig. 4
Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1309-03 04 14
page 4 of 5
5SMX 12L1280
20
100
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
15
V
CC
= 600 V
C
ies
V
CC
= 900 V
10
C [nF]
V
GE
[V]
10
C
oes
1
5
C
res
I
C
= 100 A
T
vj
= 25 °C
0
0.00
0.20
0.40
0.60
Q
g
[µC]
0.80
1.00
1.20
0.1
0
5
10
15
20
V
CE
[V]
25
30
35
Fig. 5
Typical gate charge characteristics
Fig. 6
Typical capacitances vs
collector-emitter voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1309-03 04 14
