Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D087
PBSS5540Z
40 V low V
CEsat
PNP transistor
Product data sheet
Supersedes data of 2001 Jan 26
2001 Sep 21
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation.
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC converter applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers)
•
MOSFET driver applications.
DESCRIPTION
PNP low V
CEsat
transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z.
MARKING
TYPE NUMBER
PBSS5540Z
MARKING CODE
PB5540
1
Top view
2
3
PBSS5540Z
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
4
base
collector
emitter
collector
DESCRIPTION
PARAMETER
emitter-collector voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX
−40
−5
−10
<80
UNIT
V
A
A
mΩ
handbook, halfpage
4
2, 4
1
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
2001 Sep 21
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5540Z
MAX.
−40
−40
−6
−5
−10
−2
1.35
2
+150
150
+150
V
V
V
A
A
A
W
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
92
UNIT
K/W
2001 Sep 21
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−2
V; I
C
=
−500
mA
V
CE
=
−2
V; I
C
=
−1
A; note 1
V
CE
=
−2
V; I
C
=
−2
A; note 1
V
CE
=
−2
V; I
C
=
−5
A; note 1
V
CEsat
collector-emitter saturation voltage
I
C
=
−500
mA; I
B
=
−5
mA
I
C
=
−1
A; I
B
=
−10
mA
I
C
=
−2
A; I
B
=
−200
mA
R
CEsat
V
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−2
A; I
B
=
−200
mA; note 1
I
C
=
−5
A; I
B
=
−500
mA
I
C
=
−5
A; I
B
=
−500
mA
V
CE
=
−2
V; I
C
=
−2
A
I
C
=
−100
mA; V
CE
=
−10
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
MIN.
−
−
−
250
200
150
50
−
−
−
−
−
−
−
60
−
PBSS5540Z
TYP.
−
−
−
350
300
250
150
−80
−120
−110
<55
−250
−
−0.8
120
90
MAX.
−100
−50
−100
−
−
−
−
−120
−170
−160
<80
−375
−1.3
−1.25
−
105
UNIT
nA
μA
nA
mV
mV
mV
mΩ
mV
V
V
MHz
pF
2001 Sep 21
4
