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AF2302N

N-Channel Enhancement Mode Power MOSFET

Features

- Capable of 2.5V Gate Drive

- Small Package Outline

- Surface Mount Package

General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching, low

on-resistance and cost-effectiveness.

Product Summary

DSS

(V)

DS(ON)

(mΩ)

(A)

3.2

Pin Assignments

(Top View)

1. G

2. S

3. D

Pin Descriptions

No.

Name

Description

Gate

Source

Drain

Ordering information

A X

Feature

F :MOSFET

2302N X X X

Package

W: SOT-23

Lead Free

Blank : Normal

L : Lead Free Package

Packing

Blank : Tube or Bulk

A : Tape & Reel

Block Diagram

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.3 Jul 12, 2005

1/5

AF2302N

N-Channel Enhancement Mode Power MOSFET

Absolute Maximum Ratings

Symbol

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V

=4.5V

(Note 1)

Pulsed Drain Current

(Note 2, 3)

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

Operating Junction Temperature Range

=25ºC

=70ºC

=25ºC

Rating

±12

3.2

2.6

1.38

0.01

-55 to +150

Units

W/ºC

ºC

Thermal Data

Symbol

θJA

Parameter

Thermal Resistance Junction-Ambient

(Note 1)

Max.

Limit

Units

ºC/W

Electrical Characteristics

=25

C unless otherwise specified)

Symbol

Parameter

Test Conditions

=0V, I

=250uA

Reference to 25ºC,

=1mA

=4.5V, I

=3.6A

=2.5V, I

=3.1A

= V

, I

=250uA

=5V, I

=3.6A

=20V, V

=0V

=20V, V

=0V

=±12V

=10V, I

=3.6A,

=4.5V

=10V, R

=2.8Ω,

=3.6A, V

=5V,

=6Ω

=10V, V

=0V,

f=1.0MHz

DSS

Drain-Source Breakdown Voltage

∆

DSS

/ Breakdown Voltage Temperature

Coefficient

∆

Static Drain-Source On-Resistance

DS(ON)

Min.

0.5

Limits

Typ.

0.1

4.4

0.6

1.9

5.2

5.7

145

100

Max.

115

1.2

±100

Unit

V/ºC

mΩ

(Note 3)

GS(th)

DSS

GSS

d(on)

d(off)

iss

oss

rss

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage

=25ºC

Current

=70ºC

Gate-Source Leakage

Total Gate Charge

(Note 3)

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Turn-On Delay Time

(Note 3)

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall-Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Symbol

Parameter

Continuous Source Current (Body

Diode)

Pulsed Source Current (Body Diode)

(Note 2)

Test Conditions

=0V, V

=1.2V

Min.

Typ.

Max.

1.2

Unit

Forward On Voltage

(Note 3)

=1.6A, V

=0V

Note 1:

Surface mounted on 1 in copper pad of FR4 board; 270 C/W when mounted on min. copper pad.

Note 2:

Pulse width limited by Max. junction temperature.

Note 3:

Pulse width

≤

300us, duty cycle

≤

2%.

Anachip Corp.

www.anachip.com.tw

2/5

Rev. 1.3 Jul 12, 2005

AF2302N

N-Channel Enhancement Mode Power MOSFET

Typical Performance Characteristics

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Reverse Diode

Anachip Corp.

www.anachip.com.tw

3/5

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

Rev. 1.3 Jul 12, 2005

AF2302N

N-Channel Enhancement Mode Power MOSFET

Typical Performance Characteristics (Continued)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

Anachip Corp.

www.anachip.com.tw

4/5

Rev. 1.3 Jul 12, 2005

AF2302N

N-Channel Enhancement Mode Power MOSFET

Marking Information

(Top View)

SOT-23

XX YW

Appendix

XX: Device Code

(See Appendix)

Date code

Y : Year

W : Week(A~Z)

Part Number

AF2302N

Package Device Code

SOT-23

Package Information

Package Type: SOT-23

1. All Dimensions Are in Millimeters.

2. Dimension Does Not Include Mold Protrusions.

Symbol

Dimensions In Millimeters

Min.

Nom.

Max.

1.00

1.15

1.30

0.00

0.10

0.15

0.20

2.70

2.90

3.10

0.30

0.40

0.50

1.70

2.00

2.30

2.40

2.65

2.90

1.40

1.50

1.60

Anachip Corp.

www.anachip.com.tw

5/5

Rev. 1.3 Jul 12, 2005

参数对比

与AF2302NWLA相近的元器件有：AF2302NWL、RCWP12068M87FKEC、AF2302NWA。描述及对比如下：

型号	AF2302NWLA	AF2302NWL	RCWP12068M87FKEC	AF2302NWA
描述	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 8870000ohm, 100V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 1206, CHIP	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	CHIP	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
端子数量	3	3	2	3
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMT	SMALL OUTLINE
表面贴装	YES	YES	YES	YES
厂商名称	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	-	Integrated Circuit Systems（IDT ）
零件包装代码	SOT-23	SOT-23	-	SOT-23
针数	3	3	-	3
Is Samacsys	N	N	-	N
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	20 V	20 V	-	20 V
最大漏极电流 (ID)	3.2 A	3.2 A	-	3.2 A
最大漏源导通电阻	0.085 Ω	0.085 Ω	-	0.085 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3
元件数量	1	1	-	1
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
极性/信道类型	N-CHANNEL	N-CHANNEL	-	N-CHANNEL
最大脉冲漏极电流 (IDM)	10 A	10 A	-	10 A
认证状态	Not Qualified	Not Qualified	-	Not Qualified
端子形式	GULL WING	GULL WING	-	GULL WING
端子位置	DUAL	DUAL	-	DUAL
晶体管应用	SWITCHING	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	SILICON	-	SILICON
Base Number Matches	1	1	-	1

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