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AF4410NS

Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

器件类别:分立半导体    晶体管   

厂商名称:Integrated Circuit Systems(IDT )

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器件参数
参数名称
属性值
厂商名称
Integrated Circuit Systems(IDT )
零件包装代码
SOT
包装说明
SMALL OUTLINE, R-PDSO-G8
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
30 V
最大漏极电流 (ID)
10 A
最大漏源导通电阻
0.0135 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDSO-G8
元件数量
1
端子数量
8
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
50 A
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
SWITCHING
晶体管元件材料
SILICON
参数对比
与AF4410NS相近的元器件有:AF4410NSA、AF4410NSL、AF4410NSLA。描述及对比如下:
型号 AF4410NS AF4410NSA AF4410NSL AF4410NSLA
描述 Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
厂商名称 Integrated Circuit Systems(IDT ) Integrated Circuit Systems(IDT ) Integrated Circuit Systems(IDT ) Integrated Circuit Systems(IDT )
零件包装代码 SOT SOT SOT SOT
包装说明 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
针数 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 30 V 30 V 30 V 30 V
最大漏极电流 (ID) 10 A 10 A 10 A 10 A
最大漏源导通电阻 0.0135 Ω 0.0135 Ω 0.0135 Ω 0.0135 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
元件数量 1 1 1 1
端子数量 8 8 8 8
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 50 A 50 A 50 A 50 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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