AOU401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU401 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOU401 is Pb-free (meets ROHS & Sony
259 specifications). AOU401L is a Green Product
ordering option. AOU401 and AOU401L are
electrically identical.
TO-251
D
Features
V
DS
(V) = -60V
I
D
= -26 A (V
GS
= -10V)
R
DS(ON)
< 40 mΩ (V
GS
= -10V) @ 20A
R
DS(ON)
< 55 mΩ (V
GS
= -4.5V)
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-60
±20
-26
-18
-60
-26
134
60
30
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
A
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
100
1.9
Max
125
2.5
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOU401
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-20A
Forward Transconductance
V
DS
=-5V, I
D
=-20A
Diode Forward Voltage
I
S
=-1A, V
GS
=0V
Maximum Body-Diode Continuous Current
Conditions
I
D
=-250uA, V
GS
=0V
V
DS
=-48V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
T
J
=125°C
-1.2
-60
32
53
43
32
-0.73
-1
-30
2977
V
GS
=0V, V
DS
=-30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
241
153
2
44
V
GS
=-10V, V
DS
=-30V, I
D
=-20A
22.2
9
10
12
V
GS
=-10V, V
DS
=-30V, R
L
=1.5Ω,
R
GEN
=3Ω
I
F
=-20A, dI/dt=100A/µs
14.5
38
15
40
59
50
2.4
54
28
3600
55
40
-1.9
Min
-60
-0.003
-1
-5
±100
-2.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
20
-I
D
(A)
15
-3.5V
10
5
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
50
Normalized On-Resistance
45
V
GS
=-4.5V
R
DS(ON)
(m
Ω
)
40
35
30
25
20
0
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
5
10
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=-10V
2
1.8
1.6
1.4
1.2
1
V
GS
=-4.5V
I
D
=-20A
V
GS
=-10V
I
D
=-20A
0
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
10
25°C
5
-4.5V
-6V
-5V
-I
D
(A)
30
-4V
25
20
15
125°C
V
DS
=-5V
80
70
60
-I
S
(A)
125°C
I
D
=-20A
1.0E+01
1.0E+00
1.0E-01
R
DS(ON)
(m
Ω
)
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
50
25°C
40
30
20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-30V
I
D
=-20A
Capacitance (pF)
4000
C
iss
8
-V
GS
(Volts)
3200
6
2400
4
1600
C
oss
C
rss
2
800
0
0
5
25 30 35 40 45
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
20
50
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
10µs
100µs
-I
D
(Amps)
10ms
DC
1.0
T
J(Max)
=175°C, T
A
=25°C
Power (W)
10.0
R
DS(ON)
limited
1ms
1000
800
600
400
200
0
0.0001
T
J(Max)
=175°C
T
A
=25°C
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
1
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
0.001
0.01
0.1
1
Single Pulse
0.01
0.00001
0.0001
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOU401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-I
D
(A), Peak Avalanche Current
25
Power Dissipation (W)
L
⋅
I
D
t
A
=
BV
−
V
DD
70
60
50
40
30
20
10
20
15
T
A
=25°C
10
0.00001
0
0.0001
0.001
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
30
25
Current rating -I
D
(A)
20
15
10
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
