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APT30M40LVFRG

Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
TO-264AA
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
AVALANCHE RATED
雪崩能效等级(Eas)
2500 mJ
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
300 V
最大漏极电流 (ID)
76 A
最大漏源导通电阻
0.04 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-264AA
JESD-30 代码
R-PSFM-T3
JESD-609代码
e1
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
304 A
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN SILVER COPPER
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
APT30M40B2VFR
APT30M40LVFR
300V 76A
0.040Ω
POWER MOS V FREDFET
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
®
B2VFR
T-MAX™
TO-264
LVFR
• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
• Avalanche Energy Rated
T-MAX™
or TO-264 Package
G
D
All Ratings: T
C
= 25°C unless otherwise specified.
APT30M40B2VFR_LVFR
UNIT
Volts
Amps
S
300
76
304
±30
±40
520
4.16
-55 to 150
300
76
50
4
1
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
300
76
0.040
250
1000
±100
2
4
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
6-2004
050-5555 Rev C
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
APT Website - http://www.advancedpower.com
nA
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT30M40B2VFR_LVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6Ω
MIN
TYP
MAX
UNIT
pF
8500
1500
390
285
56
120
16
20
48
4
10200
2100
585
425
85
180
32
40
72
8
ns
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
µC
Amps
76
304
1.3
5
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
5
Peak Diode Recovery
dv
/
dt
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
240
500
1.1
5.2
12
22
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.24
40
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 870µH, R = 25
, Peak I = 76A
j
G
L
5
I - -I [Cont.],
di
/
= 100A/µs, V
S
D
DD
- V
DSS
, T
j
- 150°C, R
G
= 2.0
,
dt
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
PDM
6-2004
t1
t2
050-5555 Rev C
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
APT30M40B2VFR_LVFR
150
I
D
, DRAIN CURRENT (AMPERES)
VGS=6.5V, 7V, 10V & 15V
I
D
, DRAIN CURRENT (AMPERES)
150
VGS=15V
VGS=10V
VGS=6.5V & 7V
6V
120
6V
120
90
5.5V
60
5V
30
4.5V
4V
0
30
60
90
120
150
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
90
5.5V
60
5V
30
4.5V
4V
0
1
2
3
4
5
6
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
150
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.3
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
120
1.2
90
1.1
VGS=10V
60
TJ = +125°C
TJ = +25°C
TJ = -55°C
1.0
VGS=20V
30
0.9
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
80
I
D
, DRAIN CURRENT (AMPERES)
0
0.8
0
40
80
120
160
200
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.20
1.15
1.10
1.05
1.00
0.95
0.90
60
40
20
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
-50
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.1
1.0
0.9
0.8
0.7
0.6
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5555 Rev C
6-2004
APT30M40B2VFR_LVFR
400
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
30,000
Ciss
100
50
10,000
C, CAPACITANCE (pF)
1mS
10
5
10mS
100mS
DC
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
5,000
Coss
Crss
1,000
500
.1
1
5
10
50 100
300
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
400
16
VDS=60V
VDS=150V
100
50
TJ =+150°C
TJ =+25°C
12
VDS=240V
8
10
5
4
100
200
300
400
500
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
T-MAX
TM
(B2) Package Outline (B2VFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline (LVFR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
6-2004
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
050-5555 Rev C
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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参数对比
与APT30M40LVFRG相近的元器件有:APT30M40B2VFRG。描述及对比如下:
型号 APT30M40LVFRG APT30M40B2VFRG
描述 Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Microsemi Microsemi
包装说明 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3
针数 3 3
Reach Compliance Code unknown compliant
ECCN代码 EAR99 EAR99
其他特性 AVALANCHE RATED AVALANCHE RATED
雪崩能效等级(Eas) 2500 mJ 2500 mJ
外壳连接 DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 300 V 300 V
最大漏极电流 (ID) 76 A 76 A
最大漏源导通电阻 0.04 Ω 0.04 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSFM-T3 R-PSIP-T3
JESD-609代码 e1 e1
元件数量 1 1
端子数量 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 304 A 304 A
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 TIN SILVER COPPER TIN SILVER COPPER
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1
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